Fabrication of high quality two-dimensional electron gases by overgrowth of focused ion beam implantation doped AlxGxAs
C. Riedesel, C. Meier, P. Schafmeister, D. Reuter, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures 17 (2003) 503–504.

Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGxAs
D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, A.D. Wieck, Applied Physics Letters 82 (2003) 481–483.

Local two-dimensional electron gas formation in p-doped GaAs/InyG yAs/AlxG xAs heterostructures by focused Si-implantation doping
D. Reuter, C. Meier, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology 17 (2002) 585–589.

Planar Hall sensors for micro-Hall magnetometry
M. Rahm, J. Raabe, R. Pulwey, J. Biberger, W. Wegscheider, D. Weiss, C. Meier, Journal of Applied Physics 91 (2002) 7980.

Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping
D. Reuter, C. Meier, A. Seekamp, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures 13 (2002) 938–941.

Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices
D. Reuter, C. Meier, M.A.S. Álvarez, A.D. Wieck, Applied Physics Letters 79 (2001) 377–379.

Tunable backscattering in quantum Hall systems induced by neighbouring gates
C. Heidtkamp, C. Meier, D. Reuter, M. Versen, S. Hoch, D. Diaconescu, A.D. Wieck, Physica B: Condensed Matter 284–288 (2000) 1728–1729.

A new peak in the bend resistance of a four-terminal device written by FIB implantation
D. Diaconescu, S. Hoch, C. Heidtkamp, C. Meier, D. Reuter, A.D. Wieck, Physica B: Condensed Matter 284–288 (2000) 1906–1907.

Laterally resolved doping by focused ion beam implantation
D. Reuter, C. Meier, M.A. Alvarez, J. Koch, A.D. Wieck, in: IECON Proc. , 2000, p. 1878.

Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells
S. Eshlaghi, C. Meier, D. Suter, D. Reuter, A.D. Wieck, Journal of Applied Physics 86 (1999) 6605–6607.

Robustness of the Quantum Hall Effect, Sample Size Versus Sample Topology, and Quality Control Management of III–V Molecular Beam Epitaxy
R.D. Tscheuschner, S. Hoch, E. Leschinsky, C. Meier, S. Theis, A.D. Wieck, International Journal of Modern Physics B 12 (1998) 1147–1170.