Bright Electrically Controllable QuantumDotMolecule Devices Fabricated by In Situ ElectronBeam Lithography
J. Schall, M. Deconinck, N. Bart, M. Florian, M. Helversen, C. Dangel, R. Schmidt, L. Bremer, F. Bopp, I. Hüllen, C. Gies, D. Reuter, A.D. Wieck, S. Rodt, J.J. Finley, F. Jahnke, A. Ludwig, S. Reitzenstein, Advanced Quantum Technologies (2021).
LibreCat: /record/22004
DOI: 10.1002/qute.202100002

Optoelectronic sampling of ultrafast electric transients with single quantum dots
A. Widhalm, S. Krehs, D. Siebert, N.L. Sharma, T. Langer, B. Jonas, D. Reuter, A. Thiede, J. Förstner, A. Zrenner, Applied Physics Letters 119 (2021) 181109.
LibreCat: /record/27099
DOI: 10.1063/5.0061358

Bright Electrically Controllable QuantumDotMolecule Devices Fabricated by In Situ ElectronBeam Lithography
J. Schall, M. Deconinck, N. Bart, M. Florian, M. Helversen, C. Dangel, R. Schmidt, L. Bremer, F. Bopp, I. Hüllen, C. Gies, D. Reuter, A.D. Wieck, S. Rodt, J.J. Finley, F. Jahnke, A. Ludwig, S. Reitzenstein, Advanced Quantum Technologies 4 (2021).
LibreCat: /record/46135
DOI: 10.1002/qute.202100002

Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports 11 (2021).
LibreCat: /record/25227
DOI: 10.1038/s41598-021-98569-6

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).
LibreCat: /record/23843
DOI: 10.1063/5.0053865

Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
D.Q. Wang, D. Reuter, A.D. Wieck, A.R. Hamilton, O. Klochan, Applied Physics Letters (2020).
LibreCat: /record/17433
DOI: 10.1063/5.0009462

InAs heteroepitaxy on nanopillar-patterned GaAs (111)A
V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner, Journal of Crystal Growth (2020).
LibreCat: /record/17434
DOI: 10.1016/j.jcrysgro.2020.125597

Electrostatic potential shape of gate-defined quantum point contacts
M. Geier, J. Freudenfeld, J.T. Silva, V. Umansky, D. Reuter, A.D. Wieck, P.W. Brouwer, S. Ludwig, Physical Review B (2020).
LibreCat: /record/17435
DOI: 10.1103/physrevb.101.165429

Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure
M. Javaid Iqbal, D. Reuter, A.D. Wieck, C. van der Wal, The European Physical Journal Applied Physics (2020).
LibreCat: /record/17436
DOI: 10.1051/epjap/2020190202

Electrical detection of excitonic states by time-resolved conductance measurements
C. Ebler, P.A. Labud, A.K. Rai, D. Reuter, A.D. Wieck, A. Ludwig, Physical Review B (2020).
LibreCat: /record/17437
DOI: 10.1103/physrevb.101.125303

Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).
LibreCat: /record/23841
DOI: 10.1002/pssb.201900532

Excess noise in      Al x   Ga  1  xAs/GaAs based quantum rings
C. Riha, S.S. Buchholz, O. Chiatti, A.D. Wieck, D. Reuter, S.F. Fischer, Applied Physics Letters (2020).
LibreCat: /record/17995
DOI: 10.1063/5.0002247

Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2020).
LibreCat: /record/21796
DOI: 10.1088/1361-6641/ab89e1

Strain-driven InAs island growth on top of GaAs(111) nanopillars
T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner, Physical Review Materials (2020).
LibreCat: /record/21797
DOI: 10.1103/physrevmaterials.4.014602

Strain-driven InAs island growth on top of GaAs(111) nanopillars
T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J. Lindner, Physical Review Materials 4 (2020).
LibreCat: /record/34093
DOI: 10.1103/physrevmaterials.4.014602

InAs heteroepitaxy on nanopillar-patterned GaAs (111)A
V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J. Lindner, Journal of Crystal Growth 537 (2020).
LibreCat: /record/34091
DOI: 10.1016/j.jcrysgro.2020.125597

Electrically controlled rapid adiabatic passage in a single quantum dot
A. Mukherjee, A. Widhalm, D. Siebert, S. Krehs, N. Sharma, A. Thiede, D. Reuter, J. Förstner, A. Zrenner, Applied Physics Letters 116 (2020) 251103.
LibreCat: /record/17322
DOI: 10.1063/5.0012257

Ultrafast electric control of a single QD exciton
J. Förstner, A. Widhalm, A. Mukherjee, S. Krehs, B. Jonas, K. Spychala, J. Förstner, A. Thiede, D. Reuter, A. Zrenner, in: 11th International Conference on Quantum Dots, Munich/Germany, 2020.
LibreCat: /record/39966

Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1f1f1)B
T. Henksmeier, S. Shvarkov, A. Trapp, D. Reuter, Journal of Crystal Growth 512 (2019) 164–168.
LibreCat: /record/7800
DOI: 10.1016/j.jcrysgro.2019.02.006

Germanium doping of cubic GaN grown by molecular beam epitaxy
M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019).
LibreCat: /record/8646
DOI: 10.1063/1.5066095