Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).
LibreCat: /record/23841
DOI: 10.1002/pssb.201900532

Excess noise in      Al x   Ga  1  xAs/GaAs based quantum rings
C. Riha, S.S. Buchholz, O. Chiatti, A.D. Wieck, D. Reuter, S.F. Fischer, Applied Physics Letters (2020).
LibreCat: /record/17995
DOI: 10.1063/5.0002247

Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2020).
LibreCat: /record/21796
DOI: 10.1088/1361-6641/ab89e1

Strain-driven InAs island growth on top of GaAs(111) nanopillars
T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner, Physical Review Materials (2020).
LibreCat: /record/21797
DOI: 10.1103/physrevmaterials.4.014602

Strain-driven InAs island growth on top of GaAs(111) nanopillars
T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J. Lindner, Physical Review Materials 4 (2020).
LibreCat: /record/34093
DOI: 10.1103/physrevmaterials.4.014602

InAs heteroepitaxy on nanopillar-patterned GaAs (111)A
V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J. Lindner, Journal of Crystal Growth 537 (2020).
LibreCat: /record/34091
DOI: 10.1016/j.jcrysgro.2020.125597

Electrically controlled rapid adiabatic passage in a single quantum dot
A. Mukherjee, A. Widhalm, D. Siebert, S. Krehs, N. Sharma, A. Thiede, D. Reuter, J. Förstner, A. Zrenner, Applied Physics Letters 116 (2020) 251103.
LibreCat: /record/17322
DOI: 10.1063/5.0012257

Ultrafast electric control of a single QD exciton
J. Förstner, A. Widhalm, A. Mukherjee, S. Krehs, B. Jonas, K. Spychala, J. Förstner, A. Thiede, D. Reuter, A. Zrenner, in: 11th International Conference on Quantum Dots, Munich/Germany, 2020.
LibreCat: /record/39966

Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1f1f1)B
T. Henksmeier, S. Shvarkov, A. Trapp, D. Reuter, Journal of Crystal Growth 512 (2019) 164–168.
LibreCat: /record/7800
DOI: 10.1016/j.jcrysgro.2019.02.006

Germanium doping of cubic GaN grown by molecular beam epitaxy
M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019).
LibreCat: /record/8646
DOI: 10.1063/1.5066095

Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (b) (2019).
LibreCat: /record/15444
DOI: 10.1002/pssb.201900532

Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars
T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, in: 2018.
LibreCat: /record/4413

MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A 
T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, in: 2018.
LibreCat: /record/4414

Decay and revival of electron spin polarization in an ensemble of (In,Ga)As quantum dots
E. Evers, V.V. Belykh, N.E. Kopteva, I.A. Yugova, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B 98 (2018).
LibreCat: /record/7008
DOI: 10.1103/physrevb.98.075309

Interlayer charge transfer in n-modulation doped Al1x Ga x As–GaAs single heterostructures
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 33 (2018).
LibreCat: /record/7009
DOI: 10.1088/1361-6641/aad83d

Basic Requirements of Spin-Flip Raman Scattering on Excitonic Resonances and Its Modulation through Additional High-Energy Illumination in Semiconductor Heterostructures
J. Debus, D. Kudlacik, V.F. Sapega, T.S. Shamirzaev, D.R. Yakovlev, D. Reuter, A.D. Wieck, A. Waag, M. Bayer, Physics of the Solid State 60 (2018) 1611–1617.
LibreCat: /record/7010
DOI: 10.1134/s1063783418080036

Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates
A. Trapp, D. Reuter, Journal of Vacuum Science &; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (2018).
LibreCat: /record/7018
DOI: 10.1116/1.5012957

Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks
V. Zolatanosha, D. Reuter, Journal of Vacuum Science &; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (2018).
LibreCat: /record/7019
DOI: 10.1116/1.5013650

Spin inertia of resident and photoexcited carriers in singly charged quantum dots
E.A. Zhukov, E. Kirstein, D.S. Smirnov, D.R. Yakovlev, M.M. Glazov, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, Physical Review B 98 (2018).
LibreCat: /record/7021
DOI: 10.1103/physrevb.98.121304

Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2018).
LibreCat: /record/7022
DOI: 10.1002/pssb.201700457