F. Bopp et al., “Coherent driving of direct and indirect excitons in a quantum dot molecule,”10.1103/physrevb.107.165426__Physical Review B, vol. 107, no. 16, Art. no. 165426, 2023, doi:10.1103/physrevb.107.165426 .
LibreCat: /record/46133
DOI: 10.1103/physrevb.107.165426

M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride on GrapheneCovered 3CSiC Substrates by PlasmaAssisted Molecular Beam Epitaxy,”10.1002/pssb.202300034__physica status solidi (b), vol. 260, no. 7, 2023, doi:10.1002/pssb.202300034 .
LibreCat: /record/46132
DOI: 10.1002/pssb.202300034

S. Feddersen, V. Zolatanosha, A. Alshaikh, D. Reuter, and C. Heyn, “Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets,”10.3390/nano13030466__Nanomaterials, vol. 13, no. 3, Art. no. 466, 2023, doi:10.3390/nano13030466 .
LibreCat: /record/46278
DOI: 10.3390/nano13030466

A. Bauer, D. Woitkowski, D. Reuter, and P. Reinhold, “Fachliche und überfachliche Herausforderungen in der Studieneingangsphase Physik,” in Hochschullehre erforschen. , U. Fahr, A. Kenner, H. Angenent, and A. Eßer-Lüghausen, Eds. Wiesbaden: Springer Fachmedien, 2022, pp. 339–362.
LibreCat: /record/29789
DOI: 10.1007/978-3-658-34185-5_19

T. Riedl, V. S. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. K. N. Lindner, “SizeDependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars,”10.1002/admi.202102159__Advanced Materials Interfaces, Art. no. 2102159, 2022, doi:10.1002/admi.202102159 .
LibreCat: /record/30743
DOI: 10.1002/admi.202102159

M. Kobecki et al., “Giant Photoelasticity of Polaritons for Detection of Coherent Phonons in a Superlattice with Quantum Sensitivity,”10.1103/physrevlett.128.157401__Physical Review Letters, vol. 128, no. 15, Art. no. 157401, 2022, doi:10.1103/physrevlett.128.157401 .
LibreCat: /record/30880
DOI: 10.1103/physrevlett.128.157401

T. Henksmeier et al., “Remote epitaxy of InxG-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates,”10.1016/j.jcrysgro.2022.126756__Journal of Crystal Growth, vol. 593, Art. no. 126756, 2022, doi:10.1016/j.jcrysgro.2022.126756 .
LibreCat: /record/32108
DOI: 10.1016/j.jcrysgro.2022.126756

A. K. Verma, F. Bopp, J. J. Finley, B. Jonas, A. Zrenner, and D. Reuter, “Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy,”10.1016/j.jcrysgro.2022.126715__Journal of Crystal Growth, Art. no. 126715, 2022, doi:10.1016/j.jcrysgro.2022.126715 .
LibreCat: /record/31241
DOI: 10.1016/j.jcrysgro.2022.126715

M. Kobecki et al., “Giant Photoelasticity of Polaritons for Detection of Coherent Phonons in a Superlattice with Quantum Sensitivity,”10.1103/physrevlett.128.157401__Physical Review Letters, vol. 128, no. 15, Art. no. 157401, 2022, doi:10.1103/physrevlett.128.157401 .
LibreCat: /record/31541
DOI: 10.1103/physrevlett.128.157401

F. Bopp et al., “Quantum Dot Molecule Devices with Optical Control of Charge Status and Electronic Control of Coupling,”10.1002/qute.202200049__Advanced Quantum Technologies, Art. no. 2200049, 2022, doi:10.1002/qute.202200049 .
LibreCat: /record/33332
DOI: 10.1002/qute.202200049

F. Meier et al., “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks,”10.1002/pssb.202200508__physica status solidi (b), Art. no. 2200508, 2022, doi:10.1002/pssb.202200508 .
LibreCat: /record/35232
DOI: 10.1002/pssb.202200508

T. Riedl et al., “Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A,”10.1063/5.0121559__Journal of Applied Physics, vol. 132, no. 18, Art. no. 185701, 2022, doi:10.1063/5.0121559 .
LibreCat: /record/34056
DOI: 10.1063/5.0121559

T. Riedl, V. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. Lindner, “SizeDependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars,”10.1002/admi.202102159__Advanced Materials Interfaces, vol. 9, no. 11, Art. no. 2102159, 2022, doi:10.1002/admi.202102159 .
LibreCat: /record/34053
DOI: 10.1002/admi.202102159

T. Henksmeier et al., “Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates,”10.1016/j.jcrysgro.2022.126756__Journal of Crystal Growth, vol. 593, Art. no. 126756, 2022, doi:10.1016/j.jcrysgro.2022.126756 .
LibreCat: /record/36804
DOI: 10.1016/j.jcrysgro.2022.126756

M. Sartison, O.https://doi.org/10.1088/2633-4356/ac6f3e__Camacho Ibarra, K. D. Jöns, I. Caltzidis, and D. Reuter, “Scalable integration of quantum emitters into photonic integrated circuits,”https://doi.org/10.1088/2633-4356/ac6f3e__vol. 2. 2022, doi:https://doi.org/10.1088/2633-4356/ac6f3e .
LibreCat: /record/41800
DOI: https://doi.org/10.1088/2633-4356/ac6f3e

B. Jonas et al., “Nonlinear down-conversion in a single quantum dot,”10.1038/s41467-022-28993-3__Nature Communications, vol. 13, no. 1, Art. no. 1387, 2022, doi:10.1038/s41467-022-28993-3 .
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DOI: 10.1038/s41467-022-28993-3

B. Jonas et al., Nonlinear down-conversion in a single quantum dot. LibreCat University, 2022.
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DOI: 10.5281/ZENODO.6024228

T. Henksmeier, M. Eppinger, B. Reineke, T. Zentgraf, C. Meier, and D. Reuter, “Selective Etching of (111)B-Oriented AlxGxAs-Layers for Epitaxial Lift-Off,” physica status solidi (a), vol. 218, no. 3, p. 2000408, 2021.
LibreCat: /record/20592
DOI: https://doi.org/10.1002/pssa.202000408

F. Meier et al., “Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001),” AIP Advances, 2021.
LibreCat: /record/22533
DOI: 10.1063/5.0053865

E. Evers et al., “Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation,” npj Quantum Information, 2021.
LibreCat: /record/22003
DOI: 10.1038/s41534-021-00395-1