T. Henksmeier et al., “Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates,”10.1016/j.jcrysgro.2022.126756__Journal of Crystal Growth, vol. 593, Art. no. 126756, 2022, doi:10.1016/j.jcrysgro.2022.126756 .
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B. Jonas et al., Nonlinear down-conversion in a single quantum dot. LibreCat University, 2022.
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T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, and J. Lindner, “Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars,” presented at the 14th International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures (ACSIN-14), Sendai (Japan), 2018.
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T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, and J. Lindner, “MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A ,” presented at the 14th International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures (ACSIN-14), Sendai (Japan), 2018.
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V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, and J. Lindner, “InAs heteroepitaxy on GaAs patterned by nanosphere lithography,” presented at the E-MRS Fall Meeting 2017, Warsaw (Poland), 2017.
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T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, and J. Lindner, “Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography,” presented at the E-MRS Fall Meeting 2017, Warsaq (Poland), 2017.
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T. Riedl et al., “Morphology, structure and enhanced PL of molecular beam epitaxial In0.2G.8As layers on nanopillar patterned GaAs.” 2017.
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S. Varwig et al., “Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots,”10.1007/s00340-015-6274-y__Applied Physics B, vol. 122, no. 1, Art. no. 17, 2016, doi:10.1007/s00340-015-6274-y .
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S. Blumenthal et al., “Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots,”10.1002/pssc.201600010__physica status solidi (c), vol. 13, no. 5–6, pp. 292–296, 2016, doi:10.1002/pssc.201600010 .
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D. Mantei et al., “Robust Population Inversion by Polarization Selective Pulsed Excitation,” Scientific Reports, vol. 5, no. 1, p. 10313, 2015.
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M. Bürger, J. Lindner, D. Reuter, and D. J. As, “Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process,” physica status solidi (c), vol. 12, no. 4–5, pp. 452–455, 2015.
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M. Bürger, J. Lindner, D. Reuter, and D. J. As, “Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process,” presented at the European Materials Research Society Spring Meeting 2014, Lille (France), 2014.
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M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, and D. J. As, “Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots,” Applied Physics Letters, vol. 102, no. 8, p. 081105, 2013.
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C. Mietze et al., “Band offsets in cubic GaN/AlN superlattices,” Physical Review B, vol. 83, no. 19, 2011.
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A. Scholle et al., “Magnetic characterization of conductance electrons in GaN,” physica status solidi (b), vol. 247, no. 7, pp. 1728–1731, 2010.
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K. A. Piegdon et al., “Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator,”10.1016/j.physe.2009.12.051__Physica E: Low-dimensional Systems and Nanostructures, vol. 42, no. 10, pp. 2552–2555, 2010, doi:10.1016/j.physe.2009.12.051 .
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K. A. Piegdon et al., “Tuning quantum-dot based photonic devices with liquid crystals,”10.1364/oe.18.007946__Optics Express, vol. 18, no. 8, Art. no. 7946, 2010, doi:10.1364/oe.18.007946 .
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D. J. As, E. Tschumak, I. Laubenstein, R. M. Kemper, and K. Lischka, “Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers,”10.1557/proc-1108-a01-02__in Materials Research Society Symposium Proceedings, 2009, vol. 1108, pp. 3–8, doi:10.1557/proc-1108-a01-02 .
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