T. Henksmeier et al., “Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates,”10.1016/j.jcrysgro.2022.126756__Journal of Crystal Growth, vol. 593, Art. no. 126756, 2022, doi:10.1016/j.jcrysgro.2022.126756 .

B. Jonas et al., Nonlinear down-conversion in a single quantum dot. LibreCat University, 2022.

T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, and J. Lindner, “Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars,” presented at the 14th International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures (ACSIN-14), Sendai (Japan), 2018.

T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, and J. Lindner, “MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A ,” presented at the 14th International Conference on Atomically Controlles Surfaces, Interfaces and Nanostructures (ACSIN-14), Sendai (Japan), 2018.

V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, and J. Lindner, “InAs heteroepitaxy on GaAs patterned by nanosphere lithography,” presented at the E-MRS Fall Meeting 2017, Warsaw (Poland), 2017.

T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, and J. Lindner, “Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography,” presented at the E-MRS Fall Meeting 2017, Warsaq (Poland), 2017.

T. Riedl et al., “Morphology, structure and enhanced PL of molecular beam epitaxial In0.2G.8As layers on nanopillar patterned GaAs.” 2017.

S. Varwig et al., “Advanced optical manipulation of carrier spins in (In,Ga)As quantum dots,”10.1007/s00340-015-6274-y__Applied Physics B, vol. 122, no. 1, Art. no. 17, 2016, doi:10.1007/s00340-015-6274-y .

S. Blumenthal et al., “Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots,”10.1002/pssc.201600010__physica status solidi (c), vol. 13, no. 5–6, pp. 292–296, 2016, doi:10.1002/pssc.201600010 .

D. Mantei et al., “Robust Population Inversion by Polarization Selective Pulsed Excitation,” Scientific Reports, vol. 5, no. 1, p. 10313, 2015.

M. Bürger, J. Lindner, D. Reuter, and D. J. As, “Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process,” physica status solidi (c), vol. 12, no. 4–5, pp. 452–455, 2015.

M. Bürger, J. Lindner, D. Reuter, and D. J. As, “Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process,” presented at the European Materials Research Society Spring Meeting 2014, Lille (France), 2014.

M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, and D. J. As, “Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots,” Applied Physics Letters, vol. 102, no. 8, p. 081105, 2013.

C. Mietze et al., “Band offsets in cubic GaN/AlN superlattices,” Physical Review B, vol. 83, no. 19, 2011.

A. Scholle et al., “Magnetic characterization of conductance electrons in GaN,” physica status solidi (b), vol. 247, no. 7, pp. 1728–1731, 2010.

K. A. Piegdon et al., “Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator,”10.1016/j.physe.2009.12.051__Physica E: Low-dimensional Systems and Nanostructures, vol. 42, no. 10, pp. 2552–2555, 2010, doi:10.1016/j.physe.2009.12.051 .

K. A. Piegdon et al., “Tuning quantum-dot based photonic devices with liquid crystals,”10.1364/oe.18.007946__Optics Express, vol. 18, no. 8, Art. no. 7946, 2010, doi:10.1364/oe.18.007946 .

D. J. As, E. Tschumak, I. Laubenstein, R. M. Kemper, and K. Lischka, “Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers,”10.1557/proc-1108-a01-02__in Materials Research Society Symposium Proceedings, 2009, vol. 1108, pp. 3–8, doi:10.1557/proc-1108-a01-02 .