@inproceedingsHilleringmann_Vieregge_Horstmann_2000, title=Nanometer Scale Lateral Structures of MOS Type Layers, booktitle=Proceedings Micro. tec, author=Hilleringmann, Ulrich and Vieregge, T and Horstmann, JT, year=2000, pages=49–53 

@inproceedingsOtterbach_Hilleringmann_1999, title=High rate CVD-diamond etching for high temperature pressure sensor applications, volume=1, booktitle=29th European Solid-State Device Research Conference, author=Otterbach, R. and Hilleringmann, Ulrich, year=1999, pages=320–323 

@inproceedingsHorstmann_Hilleringmann_Goser_1998, title=Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors, booktitle=28th European Solid-State Device Research Conference, author=Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K., year=1998, pages=512–515 

@articleHeinrich_Muller_Hilleringmann_Goser_Holmes_Hwang_Stern_1997, title=CMOS-compatible organic light-emitting diodes, volume=44, DOI=10.1109/16.605463, number=8, journal=IEEE Transactions on Electron Devices, author=Heinrich, L.M.H. and Muller, J. and Hilleringmann, Ulrich and Goser, K.F. and Holmes, A. and Hwang, Do-Hoon and Stern, R., year=1997, pages=1249–1252 

@inproceedingsMuller_Wirth_Hilleringmann_Goser_1996, title=Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission, booktitle=ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference, author=Muller, J. and Wirth, G. and Hilleringmann, Ulrich and Goser, K., year=1996, pages=947–950 

@inproceedingsHorstmann_Hilleringmann_Goser_1996, title=Characterization and Matching Analysis of 50 nm-NMOS-Transistors, booktitle=ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference, author=Horstmann, J. T. and Hilleringmann, Ulrich and Goser, K., year=1996, pages=253–256 

@inproceedingsHorstmann_Hilleringmann_Goser_1996, title=ESSDERC’96, Bologna, Italy, volume=253, booktitle=Conf. Dig, author=Horstmann, JT and Hilleringmann, Ulrich and Goser, K, year=1996