Encapsulating the active Layer of organic Thin-Film Transistors
C. Pannemann, T. Diekmann, U. Hilleringmann, U. Schurmann, M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, in: Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics, IEEE, 2006.

Degradation of organic field-effect transistors made of pentacene
Ch. Pannemann, T. Diekmann, U. Hilleringmann, Journal of Materials Research 19 (2005) 1999–2002.

On the degradation of organic field-effect transistors
Ch. Pannemann, T. Diekmann, U. Hilleringmann, in: Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004., IEEE, 2005.

Degradation of organic field-effect transistors made of pentacene
Ch. Pannemann, T. Diekmann, U. Hilleringmann, Journal of Materials Research 19 (2005) 1999–2002.

Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics
M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, U. Hilleringmann, S. Meyer, J. Pflaum, Applied Physics Letters 86 (2005).

Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry
R. Scholz, A.-D. Müller, F. Müller, I. Thurzo, B.A. Paez, L. Mancera, D.R.T. Zahn, C. Pannemann, U. Hilleringmann, in: Z. Bao, D.J. Gundlach (Eds.), SPIE Proceedings, SPIE, 2005.

Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry
R. Scholz, A.-D. Müller, F. Müller, I. Thurzo, B.A. Paez, L. Mancera, D.R.T. Zahn, C. Pannemann, U. Hilleringmann, in: Z. Bao, D.J. Gundlach (Eds.), SPIE Proceedings, SPIE, 2005.

Ätztechnik
U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, Wiesbaden, 2004, pp. 65–90.

Imprint structured organic thin film transistors as driving circuit in single-use sensor applications
U. Hilleringmann, C. Pannemann, in: G. Zhang, H. Zhao, Z. Wang (Eds.), Fifth International Symposium on Instrumentation and Control Technology, SPIE, 2004.

Piezoresistive pressure sensors in CVD diamond for high-temperature applications
R. Otterbach, U. Hilleringmann, in: G. Zhang, H. Zhao, Z. Wang (Eds.), Fifth International Symposium on Instrumentation and Control Technology, SPIE, 2004.

Masking and etching of silicon and related materials for geometries down to 25 nm
U. Hilleringmann, T. Vieregge, J.T. Horstmann, in: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.999), IEEE, 2003.

Matching analysis of NMOS-transistors with a channel length down to 30 nm
J.T. Horstmann, U. Hilleringmann, K. Goser, in: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.999), IEEE, 2003.

Negative differential resistance in ultrashort bulk MOSFETs
G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, in: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.999), IEEE, 2003.

Nanometer scale organic thin film transistors with Pentacene
Ch. Pannemann, T. Diekmann, U. Hilleringmann, Microelectronic Engineering 67–68 (2003) 845–852.

Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip
U. Hilleringmann, K. Goser, IEEE Transactions on Electron Devices 42 (2002) 841–846.

Characterization of submicron NMOS devices due to visible light emission
I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering 21 (2002) 363–366.

Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon
U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.

System integration of optical devices and analog CMOS amplifiers
E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits 29 (2002) 1006–1010.

System integration of optical devices and analog CMOS amplifiers
E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits 29 (2002) 1006–1010.

Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique
J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30 (2002) 431–434.