C. Pannemann et al., “Encapsulating the active Layer of organic Thin-Film Transistors,”10.1109/polytr.2005.1596488__2006, doi:10.1109/polytr.2005.1596488 .
LibreCat: /record/39842
DOI: 10.1109/polytr.2005.1596488

Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Degradation of organic field-effect transistors made of pentacene,”10.1557/jmr.2004.0267__Journal of Materials Research, vol. 19, no. 7, pp. 1999–2002, 2005, doi:10.1557/jmr.2004.0267 .
LibreCat: /record/39846
DOI: 10.1557/jmr.2004.0267

Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “On the degradation of organic field-effect transistors,”10.1109/icm.2004.1434210__2005, doi:10.1109/icm.2004.1434210 .
LibreCat: /record/39848
DOI: 10.1109/icm.2004.1434210

Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Degradation of organic field-effect transistors made of pentacene,”10.1557/jmr.2004.0267__Journal of Materials Research, vol. 19, no. 7, pp. 1999–2002, 2005, doi:10.1557/jmr.2004.0267 .
LibreCat: /record/39349
DOI: 10.1557/jmr.2004.0267

M. Scharnberg et al., “Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics,”10.1063/1.1849845__Applied Physics Letters, vol. 86, no. 2, Art. no. 024104, 2005, doi:10.1063/1.1849845 .
LibreCat: /record/39574
DOI: 10.1063/1.1849845

R. Scholz et al., “Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry,”10.1117/12.617004__in SPIE Proceedings, 2005, doi:10.1117/12.617004 .
LibreCat: /record/39835
DOI: 10.1117/12.617004

R. Scholz et al., “Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry,”10.1117/12.617004__in SPIE Proceedings, 2005, doi:10.1117/12.617004 .
LibreCat: /record/39834
DOI: 10.1117/12.617004

U. Hilleringmann, “Ätztechnik,” in Silizium-Halbleitertechnologie, Wiesbaden: Vieweg+Teubner Verlag, 2004, pp. 65–90.
LibreCat: /record/39850
DOI: 10.1007/978-3-322-94072-8_5

U. Hilleringmann and C. Pannemann, “Imprint structured organic thin film transistors as driving circuit in single-use sensor applications,”10.1117/12.521463__in Fifth International Symposium on Instrumentation and Control Technology, 2004, doi:10.1117/12.521463 .
LibreCat: /record/39872
DOI: 10.1117/12.521463

R. Otterbach and U. Hilleringmann, “Piezoresistive pressure sensors in CVD diamond for high-temperature applications,”10.1117/12.521928__in Fifth International Symposium on Instrumentation and Control Technology, 2004, doi:10.1117/12.521928 .
LibreCat: /record/39873
DOI: 10.1117/12.521928

U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “Masking and etching of silicon and related materials for geometries down to 25 nm,”10.1109/iecon.1999.822171__2003, doi:10.1109/iecon.1999.822171 .
LibreCat: /record/39887
DOI: 10.1109/iecon.1999.822171

J. T. Horstmann, U. Hilleringmann, and K. Goser, “Matching analysis of NMOS-transistors with a channel length down to 30 nm,”10.1109/iecon.1999.822163__2003, doi:10.1109/iecon.1999.822163 .
LibreCat: /record/39888
DOI: 10.1109/iecon.1999.822163

G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Negative differential resistance in ultrashort bulk MOSFETs,”10.1109/iecon.1999.822164__2003, doi:10.1109/iecon.1999.822164 .
LibreCat: /record/39885
DOI: 10.1109/iecon.1999.822164

Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Nanometer scale organic thin film transistors with Pentacene,”10.1016/s0167-9317(03)00146-1__Microelectronic Engineering, vol. 67–68, pp. 845–852, 2003, doi:10.1016/s0167-9317(03)00146-1 .
LibreCat: /record/39851
DOI: 10.1016/s0167-9317(03)00146-1

U. Hilleringmann and K. Goser, “Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip,”10.1109/16.381978__IEEE Transactions on Electron Devices, vol. 42, no. 5, pp. 841–846, 2002, doi:10.1109/16.381978 .
LibreCat: /record/39904
DOI: 10.1109/16.381978

I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization of submicron NMOS devices due to visible light emission,”10.1016/0167-9317(93)90092-j__Microelectronic Engineering, vol. 21, no. 1–4, pp. 363–366, 2002, doi:10.1016/0167-9317(93)90092-j .
LibreCat: /record/39912
DOI: 10.1016/0167-9317(93)90092-j

U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,”10.1016/0167-9317(92)90425-q__Microelectronic Engineering, vol. 19, no. 1–4, pp. 211–214, 2002, doi:10.1016/0167-9317(92)90425-q .
LibreCat: /record/39914
DOI: 10.1016/0167-9317(92)90425-q

E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical devices and analog CMOS amplifiers,”10.1109/4.297714__IEEE Journal of Solid-State Circuits, vol. 29, no. 8, pp. 1006–1010, 2002, doi:10.1109/4.297714 .
LibreCat: /record/39906
DOI: 10.1109/4.297714

E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical devices and analog CMOS amplifiers,”10.1109/4.297714__IEEE Journal of Solid-State Circuits, vol. 29, no. 8, pp. 1006–1010, 2002, doi:10.1109/4.297714 .
LibreCat: /record/39907
DOI: 10.1109/4.297714

J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,”10.1016/0167-9317(95)00280-4__Microelectronic Engineering, vol. 30, no. 1–4, pp. 431–434, 2002, doi:10.1016/0167-9317(95)00280-4 .
LibreCat: /record/39899
DOI: 10.1016/0167-9317(95)00280-4