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Pannemann Ch, Diekmann T, Hilleringmann U. Degradation of organic field-effect transistors made of pentacene. Journal of Materials Research. 2005;19(7):1999-2002. doi:10.1557/jmr.2004.0267

Pannemann Ch, Diekmann T, Hilleringmann U. On the degradation of organic field-effect transistors. In: Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004. IEEE; 2005. doi:10.1109/icm.2004.1434210

Pannemann Ch, Diekmann T, Hilleringmann U. Degradation of organic field-effect transistors made of pentacene. Journal of Materials Research. 2005;19(7):1999-2002. doi:10.1557/jmr.2004.0267

Scharnberg M, Hu J, Kanzow J, et al. Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. Applied Physics Letters. 2005;86(2). doi:10.1063/1.1849845

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Hilleringmann U. Ätztechnik. In: Silizium-Halbleitertechnologie. Vieweg+Teubner Verlag; 2004:65–90. doi:10.1007/978-3-322-94072-8_5

Hilleringmann U, Pannemann C. Imprint structured organic thin film transistors as driving circuit in single-use sensor applications. In: Zhang G, Zhao H, Wang Z, eds. Fifth International Symposium on Instrumentation and Control Technology. SPIE; 2004. doi:10.1117/12.521463

Otterbach R, Hilleringmann U. Piezoresistive pressure sensors in CVD diamond for high-temperature applications. In: Zhang G, Zhao H, Wang Z, eds. Fifth International Symposium on Instrumentation and Control Technology. SPIE; 2004. doi:10.1117/12.521928

Hilleringmann U, Vieregge T, Horstmann JT. Masking and etching of silicon and related materials for geometries down to 25 nm. In: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.999). IEEE; 2003. doi:10.1109/iecon.1999.822171

Horstmann JT, Hilleringmann U, Goser K. Matching analysis of NMOS-transistors with a channel length down to 30 nm. In: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.999). IEEE; 2003. doi:10.1109/iecon.1999.822163

Wirth G, Hilleringmann U, Horstmann JT, Goser K. Negative differential resistance in ultrashort bulk MOSFETs. In: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.999). IEEE; 2003. doi:10.1109/iecon.1999.822164

Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film transistors with Pentacene. Microelectronic Engineering. 2003;67-68:845-852. doi:10.1016/s0167-9317(03)00146-1

Hilleringmann U, Goser K. Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. IEEE Transactions on Electron Devices. 2002;42(5):841-846. doi:10.1109/16.381978

Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering. 2002;21(1-4):363-366. doi:10.1016/0167-9317(93)90092-j

Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering. 2002;19(1-4):211-214. doi:10.1016/0167-9317(92)90425-q

Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits. 2002;29(8):1006-1010. doi:10.1109/4.297714

Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits. 2002;29(8):1006-1010. doi:10.1109/4.297714

Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering. 2002;30(1-4):431-434. doi:10.1016/0167-9317(95)00280-4