Nanometer Scale Lateral Structures of MOS Type Layers
U. Hilleringmann, T. Vieregge, J. Horstmann, in: Proceedings Micro. Tec, 2000, pp. 49–53.

High rate CVD-diamond etching for high temperature pressure sensor applications
R. Otterbach, U. Hilleringmann, in: 29th European Solid-State Device Research Conference, 1999, pp. 320–323.

Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors
J.T. Horstmann, U. Hilleringmann, K. Goser, in: 28th European Solid-State Device Research Conference, 1998, pp. 512–515.

CMOS-compatible organic light-emitting diodes
L.M.H. Heinrich, J. Muller, U. Hilleringmann, K.F. Goser, A. Holmes, D.-H. Hwang, R. Stern, IEEE Transactions on Electron Devices 44 (1997) 1249–1252.

Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission
J. Muller, G. Wirth, U. Hilleringmann, K. Goser, in: ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference, 1996, pp. 947–950.

Characterization and Matching Analysis of 50 nm-NMOS-Transistors
J.T. Horstmann, U. Hilleringmann, K. Goser, in: ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference, 1996, pp. 253–256.

ESSDERC’96, Bologna, Italy
J. Horstmann, U. Hilleringmann, K. Goser, in: Conf. Dig, 1996.