Baron, E., Goldhahn, R., Deppe, M., As, D. J., &; Feneberg, M. (2019). Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm3. Physical Review Materials.https://doi.org/10.1103/physrevmaterials.3.104603 
LibreCat: /record/23831
DOI: 10.1103/physrevmaterials.3.104603

Deppe, M., Gerlach, J. W., Shvarkov, S., Rogalla, D., Becker, H.-W., Reuter, D., &; As, D. J. (2019). Germanium doping of cubic GaN grown by molecular beam epitaxy. Journal of Applied Physics.https://doi.org/10.1063/1.5066095 
LibreCat: /record/8646
DOI: 10.1063/1.5066095

Buß, J. H., Schupp, T., As, D. J., Hägele, D., &; Rudolph, J. (2019). Optical excitation density dependence of spin dynamics in bulk cubic GaN. Journal of Applied Physics.https://doi.org/10.1063/1.5123914 
LibreCat: /record/13965
DOI: 10.1063/1.5123914

Baron, E., Goldhahn, R., Deppe, M., As, D. J., &; Feneberg, M. (2019). Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm3. Physical Review Materials.https://doi.org/10.1103/physrevmaterials.3.104603 
LibreCat: /record/13966
DOI: 10.1103/physrevmaterials.3.104603

Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., &; As, D. J. (2019). Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N. Physica Status Solidi (b), Article 1900532.https://doi.org/10.1002/pssb.201900532 
LibreCat: /record/15444
DOI: 10.1002/pssb.201900532

Herval, L. K. S., de Godoy, M. P. F., Wecker, T., &; As, D. J. (2018). Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures. Journal of Luminescence, 198, 309–313.https://doi.org/10.1016/j.jlumin.2018.02.051 
LibreCat: /record/4809
DOI: 10.1016/j.jlumin.2018.02.051

Blumenthal, S., Reuter, D., &; As, D. J. (2018). Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. Physica Status Solidi (B), 255(5).https://doi.org/10.1002/pssb.201700457 
LibreCat: /record/7022
DOI: 10.1002/pssb.201700457

As, D. J., &; Lischka, K. (2018). Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications. In Molecular Beam Epitaxy (pp. 95–114). Elsevier.https://doi.org/10.1016/b978-0-12-812136-8.00006-2 
LibreCat: /record/4350
DOI: 10.1016/b978-0-12-812136-8.00006-2

Blumenthal, S., Rieger, T., Meertens, D., Pawlis, A., Reuter, D., &; As, D. J. (2018). Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. Physica Status Solidi (b), 255(3), 1600729.https://doi.org/10.1002/pssb.201600729 
LibreCat: /record/20588
DOI: https://doi.org/10.1002/pssb.201600729

Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., &; As, D. J. (2017). Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64G.36N Double Quantum Wells. Physica Status Solidi (B), 255(5).https://doi.org/10.1002/pssb.201700373 
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DOI: 10.1002/pssb.201700373

Wecker, T., Jostmeier, T., Rieger, T., Neumann, E., Pawlis, A., Betz, M.,https://doi.org/10.1016/j.jcrysgro.2017.01.022__As, D. J. (2017). Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures. Journal of Crystal Growth, 477, 149–153.https://doi.org/10.1016/j.jcrysgro.2017.01.022 
LibreCat: /record/4810
DOI: 10.1016/j.jcrysgro.2017.01.022

Deppe, M., Gerlach, J. W., Reuter, D., &; As, D. J. (2017). Incorporation of germanium for n-type doping of cubic GaN. Physica Status Solidi (B), 254(8).https://doi.org/10.1002/pssb.201600700 
LibreCat: /record/4811
DOI: 10.1002/pssb.201600700

Czerniuk, T., Ehrlich, T., Wecker, T., As, D. J., Yakovlev, D. R., Akimov, A. V., &; Bayer, M. (2017). Picosecond Acoustics in Single Quantum Wells of Cubic GaN/(Al,Ga)N. Physical Review Applied, 7(1).https://doi.org/10.1103/physrevapplied.7.014006 
LibreCat: /record/4812
DOI: 10.1103/physrevapplied.7.014006

As, D. J., Deppe, M., Gerlach, J., &; Reuter, D. (2017). Optical Properties of Germanium Doped Cubic GaN. MRS Advances, 2(05), 283–288.https://doi.org/10.1557/adv.2016.637 
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DOI: 10.1557/adv.2016.637

Buß, J. H., Schupp, T., As, D. J., Brandt, O., Hägele, D., &; Rudolph, J. (2016). Electron spin dynamics in cubic GaN. Physical Review B, 94(23).https://doi.org/10.1103/physrevb.94.235202 
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DOI: 10.1103/physrevb.94.235202

Righetti, V. A. N., Gratens, X., Chitta, V. A., de Godoy, M. P. F., Rodrigues, A. D., Abramof, E.,https://doi.org/10.1063/1.4962275__Lischka, K. (2016). Magnetic and structural properties of Fe-implanted cubic GaN. Journal of Applied Physics, 120(10).https://doi.org/10.1063/1.4962275 
LibreCat: /record/4815
DOI: 10.1063/1.4962275

Rothfuchs, C., Kukharchyk, N., Koppe, T., Semond, F., Blumenthal, S., Becker, H.-W.,https://doi.org/10.1016/j.nimb.2016.06.004__Ludwig, A. (2016). Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 383, 1–5.https://doi.org/10.1016/j.nimb.2016.06.004 
LibreCat: /record/4817
DOI: 10.1016/j.nimb.2016.06.004

Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., &; As, D. J. (2016). Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0.25G.75N double quantum well grown by molecular beam epitaxy. Japanese Journal of Applied Physics, 55(5S).https://doi.org/10.7567/jjap.55.05fg01 
LibreCat: /record/7055
DOI: 10.7567/jjap.55.05fg01

Blumenthal, S., Bürger, M., Hildebrandt, A., Förstner, J., Weber, N., Meier, C., Reuter, D., &; As, D. J. (2016). Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots. Physica Status Solidi (c), 13(5–6), 292–296.https://doi.org/10.1002/pssc.201600010 
LibreCat: /record/3888
DOI: 10.1002/pssc.201600010

Rüsing, M., Wecker, T., Berth, G., As, D. J., &; Zrenner, A. (2016). Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiC. Physica Status Solidi (b), 253(4), 778–782.https://doi.org/10.1002/pssb.201552592 
LibreCat: /record/4240
DOI: 10.1002/pssb.201552592