Hajlaoui, Mahdi, et al. “Extremely Low-Energy ARPES of Quantum Well States in Cubic-GaN/AlN and GaAs/AlGaAs Heterostructures.”10.1038/s41598-021-98569-6__Scientific Reports, vol. 11, 19081, 2021, doi:10.1038/s41598-021-98569-6.
LibreCat: /record/25227
DOI: 10.1038/s41598-021-98569-6

Meier, F., et al. “Selective Area Growth of Cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001).”10.1063/5.0053865__AIP Advances, 075013, 2021, doi:10.1063/5.0053865.
LibreCat: /record/23843
DOI: 10.1063/5.0053865

Beloufa, Abbes, et al. “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1xN/AlN/GaN MOS-HEMTs.”10.1007/s11664-019-07927-8__Journal of Electronic Materials, 2020, pp. 2008–17, doi:10.1007/s11664-019-07927-8.
LibreCat: /record/23838
DOI: 10.1007/s11664-019-07927-8

Baron, Elias, et al. “Photoluminescence LineShape Analysis of Highly NType Doped Zincblende GaN.”10.1002/pssb.201900522__Physica Status Solidi (B), 1900522, 2020, doi:10.1002/pssb.201900522.
LibreCat: /record/23840
DOI: 10.1002/pssb.201900522

Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N.”10.1002/pssb.201900532__Physica Status Solidi (B), 1900532, 2020, doi:10.1002/pssb.201900532.
LibreCat: /record/23841
DOI: 10.1002/pssb.201900532

Baron, Elias, et al. “Influence of the Free-Electron Concentration on the Optical Properties of Zincblende GaN up to 1×1020cm3.”10.1103/physrevmaterials.3.104603__Physical Review Materials, 2019, doi:10.1103/physrevmaterials.3.104603.
LibreCat: /record/23831
DOI: 10.1103/physrevmaterials.3.104603

Deppe, M., et al. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.”10.1063/1.5066095__Journal of Applied Physics, 095703, 2019, doi:10.1063/1.5066095.
LibreCat: /record/8646
DOI: 10.1063/1.5066095

Buß, J. H., et al. “Optical Excitation Density Dependence of Spin Dynamics in Bulk Cubic GaN.”10.1063/1.5123914__Journal of Applied Physics, 153901, 2019, doi:10.1063/1.5123914.
LibreCat: /record/13965
DOI: 10.1063/1.5123914

Baron, Elias, et al. “Influence of the Free-Electron Concentration on the Optical Properties of Zincblende GaN up to 1×1020cm3.”10.1103/physrevmaterials.3.104603__Physical Review Materials, 2019, doi:10.1103/physrevmaterials.3.104603.
LibreCat: /record/13966
DOI: 10.1103/physrevmaterials.3.104603

Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N.”10.1002/pssb.201900532__Physica Status Solidi (b), 1900532, 2019, doi:10.1002/pssb.201900532.
LibreCat: /record/15444
DOI: 10.1002/pssb.201900532

Herval, Leonilson K. S., et al. “Investigation on Interface-Related Defects by Photoluminescence of Cubic (Al)GaN/AlN Multi-Quantum Wells Structures.”10.1016/j.jlumin.2018.02.051__Journal of Luminescence, vol. 198, Elsevier BV, 2018, pp. 309–13, doi:10.1016/j.jlumin.2018.02.051.
LibreCat: /record/4809
DOI: 10.1016/j.jlumin.2018.02.051

Blumenthal, Sarah, et al. “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.”10.1002/pssb.201700457__Physica Status Solidi (B), vol. 255, no. 5, 1700457, Wiley, 2018, doi:10.1002/pssb.201700457.
LibreCat: /record/7022
DOI: 10.1002/pssb.201700457

As, Donat Josef, and Klaus Lischka. “Nonpolar Cubic III-Nitrides: From the Basics of Growth to Device Applications.”10.1016/b978-0-12-812136-8.00006-2__Molecular Beam Epitaxy, Elsevier, 2018, pp. 95–114, doi:10.1016/b978-0-12-812136-8.00006-2.
LibreCat: /record/4350
DOI: 10.1016/b978-0-12-812136-8.00006-2

Blumenthal, Sarah, et al. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.”https://doi.org/10.1002/pssb.201600729__Physica Status Solidi (b), vol. 255, no. 3, 2018, p. 1600729, doi:https://doi.org/10.1002/pssb.201600729.
LibreCat: /record/20588
DOI: https://doi.org/10.1002/pssb.201600729

Wecker, Tobias, et al. “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64G.36N Double Quantum Wells.”10.1002/pssb.201700373__Physica Status Solidi (B), vol. 255, no. 5, 1700373, Wiley, 2017, doi:10.1002/pssb.201700373.
LibreCat: /record/4808
DOI: 10.1002/pssb.201700373

Wecker, T., et al. “Linear and Nonlinear Behaviour of Near-IR Intersubband Transitions of Cubic GaN/AlN Multi Quantum Well Structures.”10.1016/j.jcrysgro.2017.01.022__Journal of Crystal Growth, vol. 477, Elsevier BV, 2017, pp. 149–53, doi:10.1016/j.jcrysgro.2017.01.022.
LibreCat: /record/4810
DOI: 10.1016/j.jcrysgro.2017.01.022

Deppe, Michael, et al. “Incorporation of Germanium for N-Type Doping of Cubic GaN.”10.1002/pssb.201600700__Physica Status Solidi (B), vol. 254, no. 8, 1600700, Wiley, 2017, doi:10.1002/pssb.201600700.
LibreCat: /record/4811
DOI: 10.1002/pssb.201600700

Czerniuk, T., et al. “Picosecond Acoustics in Single Quantum Wells of Cubic GaN/(Al,Ga)N.”10.1103/physrevapplied.7.014006__Physical Review Applied, vol. 7, no. 1, American Physical Society (APS), 2017, doi:10.1103/physrevapplied.7.014006.
LibreCat: /record/4812
DOI: 10.1103/physrevapplied.7.014006

As, Donat Josef, et al. “Optical Properties of Germanium Doped Cubic GaN.”10.1557/adv.2016.637__MRS Advances, vol. 2, no. 05, Cambridge University Press (CUP), 2017, pp. 283–88, doi:10.1557/adv.2016.637.
LibreCat: /record/4813
DOI: 10.1557/adv.2016.637

Buß, J. H., et al. “Electron Spin Dynamics in Cubic GaN.”10.1103/physrevb.94.235202__Physical Review B, vol. 94, no. 23, American Physical Society (APS), 2016, doi:10.1103/physrevb.94.235202.
LibreCat: /record/4814
DOI: 10.1103/physrevb.94.235202