Littmann, M., Reuter, D., &; As, D. J. (2023). Remote Epitaxy of Cubic Gallium Nitride on GrapheneCovered 3CSiC Substrates by PlasmaAssisted Molecular Beam Epitaxy. Physica Status Solidi (b), 260(7).https://doi.org/10.1002/pssb.202300034 

Zscherp, M. F., Jentsch, S. A., Müller, M. J., Lider, V., Becker, C., Chen, L., Littmann, M., Meier, F., Beyer, A., Hofmann, D. M., As, D. J., Klar, P. J., Volz, K., Chatterjee, S., &; Schörmann, J. (2023). Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In<sub>x</sub>Ga<sub>1–x</sub>N. ACS Applied Materials &;amp; Interfaces, 15(33), 39513–39522.https://doi.org/10.1021/acsami.3c06319 

Baron, E., Goldhahn, R., Espinoza, S., Zahradník, M., Rebarz, M., Andreasson, J., Deppe, M., As, D. J., &; Feneberg, M. (2023). Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function. Journal of Applied Physics, 134(7).https://doi.org/10.1063/5.0153091 

Meier, F., Littmann, M., Bürger, J., Riedl, T., Kool, D., Lindner, J., Reuter, D., &; As, D. J. (2022). Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. Physica Status Solidi (b), Article 2200508.https://doi.org/10.1002/pssb.202200508 

Baron, E., Feneberg, M., Goldhahn, R., Deppe, M., Tacken, F., &; As, D. J. (2021). Optical evidence of many-body effects in the zincblende Al$_\'6dathrmx$Ga$_\'6dathrm1-x$N alloy system. Journal of Physics D: Applied Physics.https://doi.org/10.1088/1361-6463/abb97a 

Hajlaoui, M., Ponzoni, S., Deppe, M., Henksmeier, T., As, D. J., Reuter, D., Zentgraf, T., Springholz, G., Schneider, C. M., Cramm, S., &; Cinchetti, M. (2021). Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. Scientific Reports, 11, Article 19081.https://doi.org/10.1038/s41598-021-98569-6 

Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., &; As, D. J. (2021). Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances, Article 075013.https://doi.org/10.1063/5.0053865 

Beloufa, A., Bouguenna, D., Kermas, N., &; As, D. J. (2020). A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1xN/AlN/GaN MOS-HEMTs. Journal of Electronic Materials, 2008–2017.https://doi.org/10.1007/s11664-019-07927-8 

Baron, E., Goldhahn, R., Deppe, M., As, D. J., &; Feneberg, M. (2020). Photoluminescence LineShape Analysis of Highly nType Doped Zincblende GaN. Physica Status Solidi (B).https://doi.org/10.1002/pssb.201900522 

Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., &; As, D. J. (2020). Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N. Physica Status Solidi (B).https://doi.org/10.1002/pssb.201900532 

Baron, E., Goldhahn, R., Deppe, M., As, D. J., &; Feneberg, M. (2019). Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm3. Physical Review Materials.https://doi.org/10.1103/physrevmaterials.3.104603 

Deppe, M., Gerlach, J. W., Shvarkov, S., Rogalla, D., Becker, H.-W., Reuter, D., &; As, D. J. (2019). Germanium doping of cubic GaN grown by molecular beam epitaxy. Journal of Applied Physics.https://doi.org/10.1063/1.5066095 

Buß, J. H., Schupp, T., As, D. J., Hägele, D., &; Rudolph, J. (2019). Optical excitation density dependence of spin dynamics in bulk cubic GaN. Journal of Applied Physics.https://doi.org/10.1063/1.5123914 

Baron, E., Goldhahn, R., Deppe, M., As, D. J., &; Feneberg, M. (2019). Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm3. Physical Review Materials.https://doi.org/10.1103/physrevmaterials.3.104603 

Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., &; As, D. J. (2019). Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N. Physica Status Solidi (b), Article 1900532.https://doi.org/10.1002/pssb.201900532 

Herval, L. K. S., de Godoy, M. P. F., Wecker, T., &; As, D. J. (2018). Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures. Journal of Luminescence, 198, 309–313.https://doi.org/10.1016/j.jlumin.2018.02.051 

Blumenthal, S., Reuter, D., &; As, D. J. (2018). Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. Physica Status Solidi (B), 255(5).https://doi.org/10.1002/pssb.201700457 

As, D. J., &; Lischka, K. (2018). Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications. In Molecular Beam Epitaxy (pp. 95–114). Elsevier.https://doi.org/10.1016/b978-0-12-812136-8.00006-2 

Blumenthal, S., Rieger, T., Meertens, D., Pawlis, A., Reuter, D., &; As, D. J. (2018). Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. Physica Status Solidi (b), 255(3), 1600729.https://doi.org/10.1002/pssb.201600729 

Wecker, T., Callsen, G., Hoffmann, A., Reuter, D., &; As, D. J. (2017). Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64G.36N Double Quantum Wells. Physica Status Solidi (B), 255(5).https://doi.org/10.1002/pssb.201700373