Littmann, Mario, Dirk Reuter, and Donat Josef As. “Remote Epitaxy of Cubic Gallium Nitride on GrapheneCovered 3CSiC Substrates by PlasmaAssisted Molecular Beam Epitaxy.”https://doi.org/10.1002/pssb.202300034__Physica Status Solidi (b) 260, no. 7 (2023).https://doi.org/10.1002/pssb.202300034 .

Zscherp, Mario Fabian, Silas Aurel Jentsch, Marius Johannes Müller, Vitalii Lider, Celina Becker, Limei Chen, Mario Littmann, et al. “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In<sub>x</sub>Ga<sub>1–x</sub>N.”https://doi.org/10.1021/acsami.3c06319__ACS Applied Materials &;amp; Interfaces 15, no. 33 (2023): 39513–22.https://doi.org/10.1021/acsami.3c06319 .

Baron, Elias, Rüdiger Goldhahn, Shirly Espinoza, Martin Zahradník, Mateusz Rebarz, Jakob Andreasson, Michael Deppe, Donat Josef As, and Martin Feneberg. “Time-Resolved Pump–Probe Spectroscopic Ellipsometry of Cubic GaN. I. Determination of the Dielectric Function.”https://doi.org/10.1063/5.0153091__Journal of Applied Physics 134, no. 7 (2023).https://doi.org/10.1063/5.0153091 .

Meier, Falco, Mario Littmann, Julius Bürger, Thomas Riedl, Daniel Kool, Jörg Lindner, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.”https://doi.org/10.1002/pssb.202200508__Physica Status Solidi (b), 2022.https://doi.org/10.1002/pssb.202200508 .

Baron, Elias, Martin Feneberg, Rüdiger Goldhahn, Michael Deppe, Fabian Tacken, and Donat Josef As. “Optical Evidence of Many-Body Effects in the Zincblende Al$_\'6dathrmx$Ga$_\'6dathrm1-X$N Alloy System.”https://doi.org/10.1088/1361-6463/abb97a__Journal of Physics D: Applied Physics, 2021.https://doi.org/10.1088/1361-6463/abb97a .

Hajlaoui, Mahdi, Stefano Ponzoni, Michael Deppe, Tobias Henksmeier, Donat Josef As, Dirk Reuter, Thomas Zentgraf, et al. “Extremely Low-Energy ARPES of Quantum Well States in Cubic-GaN/AlN and GaAs/AlGaAs Heterostructures.”https://doi.org/10.1038/s41598-021-98569-6__Scientific Reports 11 (2021).https://doi.org/10.1038/s41598-021-98569-6 .

Meier, F., M. Protte, E. Baron, M. Feneberg, R. Goldhahn, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001).”https://doi.org/10.1063/5.0053865__AIP Advances, 2021.https://doi.org/10.1063/5.0053865 .

Beloufa, Abbes, Driss Bouguenna, Nawel Kermas, and Donat Josef As. “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1xN/AlN/GaN MOS-HEMTs.”https://doi.org/10.1007/s11664-019-07927-8__Journal of Electronic Materials, 2020, 2008–17.https://doi.org/10.1007/s11664-019-07927-8 .

Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin Feneberg. “Photoluminescence LineShape Analysis of Highly NType Doped Zincblende GaN.”https://doi.org/10.1002/pssb.201900522__Physica Status Solidi (B), 2020.https://doi.org/10.1002/pssb.201900522 .

Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and Donat Josef As. “Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N.”https://doi.org/10.1002/pssb.201900532__Physica Status Solidi (B), 2020.https://doi.org/10.1002/pssb.201900532 .

Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin Feneberg. “Influence of the Free-Electron Concentration on the Optical Properties of Zincblende GaN up to 1×1020cm3.”https://doi.org/10.1103/physrevmaterials.3.104603__Physical Review Materials, 2019.https://doi.org/10.1103/physrevmaterials.3.104603 .

Deppe, M., J. W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, Dirk Reuter, and Donat Josef As. “Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy.”https://doi.org/10.1063/1.5066095__Journal of Applied Physics, 2019.https://doi.org/10.1063/1.5066095 .

Buß, J. H., T. Schupp, Donat Josef As, D. Hägele, and J. Rudolph. “Optical Excitation Density Dependence of Spin Dynamics in Bulk Cubic GaN.”https://doi.org/10.1063/1.5123914__Journal of Applied Physics, 2019.https://doi.org/10.1063/1.5123914 .

Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin Feneberg. “Influence of the Free-Electron Concentration on the Optical Properties of Zincblende GaN up to 1×1020cm3.”https://doi.org/10.1103/physrevmaterials.3.104603__Physical Review Materials, 2019.https://doi.org/10.1103/physrevmaterials.3.104603 .

Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and Donat J. As. “Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N.”https://doi.org/10.1002/pssb.201900532__Physica Status Solidi (b), 2019.https://doi.org/10.1002/pssb.201900532 .

Herval, Leonilson K.S., Marcio P.F. de Godoy, Tobias Wecker, and Donat Josef As. “Investigation on Interface-Related Defects by Photoluminescence of Cubic (Al)GaN/AlN Multi-Quantum Wells Structures.”https://doi.org/10.1016/j.jlumin.2018.02.051__Journal of Luminescence 198 (2018): 309–13.https://doi.org/10.1016/j.jlumin.2018.02.051 .

Blumenthal, Sarah, Dirk Reuter, and Donat Josef As. “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.”https://doi.org/10.1002/pssb.201700457__Physica Status Solidi (B) 255, no. 5 (2018).https://doi.org/10.1002/pssb.201700457 .

As, Donat Josef, and Klaus Lischka. “Nonpolar Cubic III-Nitrides: From the Basics of Growth to Device Applications.”https://doi.org/10.1016/b978-0-12-812136-8.00006-2__In Molecular Beam Epitaxy, 95–114. Elsevier, 2018.https://doi.org/10.1016/b978-0-12-812136-8.00006-2 .

Blumenthal, Sarah, Torsten Rieger, Doris Meertens, Alexander Pawlis, Dirk Reuter, and Donat Josef As. “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy.”https://doi.org/10.1002/pssb.201600729__Physica Status Solidi (b) 255, no. 3 (2018): 1600729.https://doi.org/10.1002/pssb.201600729 .

Wecker, Tobias, Gordon Callsen, Axel Hoffmann, Dirk Reuter, and Donat Josef As. “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64G.36N Double Quantum Wells.”https://doi.org/10.1002/pssb.201700373__Physica Status Solidi (B) 255, no. 5 (2017).https://doi.org/10.1002/pssb.201700373 .