XRay Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3CSiC (001)/Si (001) Substrates
D.J. As, F. Meier, P. Mahler, C. Meier, Physica Status Solidi (b) 263 (2026).

Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function
E. Baron, R. Goldhahn, S. Espinoza, M. Zahradník, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg, Journal of Applied Physics 134 (2023).

Remote Epitaxy of Cubic Gallium Nitride on GrapheneCovered 3CSiC Substrates by PlasmaAssisted Molecular Beam Epitaxy
M. Littmann, D. Reuter, D.J. As, Physica Status Solidi (b) 260 (2023).

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N
M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. Becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D.M. Hofmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee, J. Schörmann, ACS Applied Materials &;amp; Interfaces 15 (2023) 39513–39522.

Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks
F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (b) (2022).

Optical evidence of many-body effects in the zincblende Al$_\'6dathrmx$Ga$_\'6dathrm1-x$N alloy system
E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, D.J. As, Journal of Physics D: Applied Physics (2021).

Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports 11 (2021).

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).

A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1xN/AlN/GaN MOS-HEMTs
A. Beloufa, D. Bouguenna, N. Kermas, D.J. As, Journal of Electronic Materials (2020) 2008–2017.

Photoluminescence LineShape Analysis of Highly nType Doped Zincblende GaN
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physica Status Solidi (B) (2020).

Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).

Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm3
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials (2019).

Germanium doping of cubic GaN grown by molecular beam epitaxy
M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019).

Optical excitation density dependence of spin dynamics in bulk cubic GaN
J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics (2019).

Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm3
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials (2019).

Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (b) (2019).

Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures
L.K.S. Herval, M.P.F. de Godoy, T. Wecker, D.J. As, Journal of Luminescence 198 (2018) 309–313.

Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2018).

Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications
D.J. As, K. Lischka, in: Molecular Beam Epitaxy, Elsevier, 2018, pp. 95–114.

Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica Status Solidi (b) 255 (2018) 1600729.