Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports 11 (2021).
LibreCat: /record/25227
DOI: 10.1038/s41598-021-98569-6

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).
LibreCat: /record/23843
DOI: 10.1063/5.0053865

A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1xN/AlN/GaN MOS-HEMTs
A. Beloufa, D. Bouguenna, N. Kermas, D.J. As, Journal of Electronic Materials (2020) 2008–2017.
LibreCat: /record/23838
DOI: 10.1007/s11664-019-07927-8

Photoluminescence LineShape Analysis of Highly nType Doped Zincblende GaN
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physica Status Solidi (B) (2020).
LibreCat: /record/23840
DOI: 10.1002/pssb.201900522

Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).
LibreCat: /record/23841
DOI: 10.1002/pssb.201900532

Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm3
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials (2019).
LibreCat: /record/23831
DOI: 10.1103/physrevmaterials.3.104603

Germanium doping of cubic GaN grown by molecular beam epitaxy
M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019).
LibreCat: /record/8646
DOI: 10.1063/1.5066095

Optical excitation density dependence of spin dynamics in bulk cubic GaN
J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics (2019).
LibreCat: /record/13965
DOI: 10.1063/1.5123914

Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm3
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials (2019).
LibreCat: /record/13966
DOI: 10.1103/physrevmaterials.3.104603

Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (b) (2019).
LibreCat: /record/15444
DOI: 10.1002/pssb.201900532

Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures
L.K.S. Herval, M.P.F. de Godoy, T. Wecker, D.J. As, Journal of Luminescence 198 (2018) 309–313.
LibreCat: /record/4809
DOI: 10.1016/j.jlumin.2018.02.051

Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2018).
LibreCat: /record/7022
DOI: 10.1002/pssb.201700457

Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications
D.J. As, K. Lischka, in: Molecular Beam Epitaxy, Elsevier, 2018, pp. 95–114.
LibreCat: /record/4350
DOI: 10.1016/b978-0-12-812136-8.00006-2

Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica Status Solidi (b) 255 (2018) 1600729.
LibreCat: /record/20588
DOI: https://doi.org/10.1002/pssb.201600729

Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64G.36N Double Quantum Wells
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2017).
LibreCat: /record/4808
DOI: 10.1002/pssb.201700373

Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures
T. Wecker, T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, D. Reuter, D.J. As, Journal of Crystal Growth 477 (2017) 149–153.
LibreCat: /record/4810
DOI: 10.1016/j.jcrysgro.2017.01.022

Incorporation of germanium for n-type doping of cubic GaN
M. Deppe, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) 254 (2017).
LibreCat: /record/4811
DOI: 10.1002/pssb.201600700

Picosecond Acoustics in Single Quantum Wells of Cubic GaN/(Al,Ga)N
T. Czerniuk, T. Ehrlich, T. Wecker, D.J. As, D.R. Yakovlev, A.V. Akimov, M. Bayer, Physical Review Applied 7 (2017).
LibreCat: /record/4812
DOI: 10.1103/physrevapplied.7.014006

Optical Properties of Germanium Doped Cubic GaN
D.J. As, M. Deppe, J. Gerlach, D. Reuter, MRS Advances 2 (2017) 283–288.
LibreCat: /record/4813
DOI: 10.1557/adv.2016.637

Electron spin dynamics in cubic GaN
J.H. Buß, T. Schupp, D.J. As, O. Brandt, D. Hägele, J. Rudolph, Physical Review B 94 (2016).
LibreCat: /record/4814
DOI: 10.1103/physrevb.94.235202