Littmann M, Reuter D, As DJ. Remote Epitaxy of Cubic Gallium Nitride on GrapheneCovered 3CSiC Substrates by PlasmaAssisted Molecular Beam Epitaxy. physica status solidi (b). 2023;260(7). doi:10.1002/pssb.202300034
LibreCat: /record/46132
DOI: 10.1002/pssb.202300034

Zscherp MF, Jentsch SA, Müller MJ, et al. Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In<sub>x</sub>Ga<sub>1–x</sub>N. ACS Applied Materials &;amp; Interfaces. 2023;15(33):39513-39522. doi:10.1021/acsami.3c06319
LibreCat: /record/46741
DOI: 10.1021/acsami.3c06319

Baron E, Goldhahn R, Espinoza S, et al. Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function. Journal of Applied Physics. 2023;134(7). doi:10.1063/5.0153091
LibreCat: /record/46573
DOI: 10.1063/5.0153091

Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. physica status solidi (b). Published online 2022. doi:10.1002/pssb.202200508
LibreCat: /record/35232
DOI: 10.1002/pssb.202200508

Baron E, Feneberg M, Goldhahn R, Deppe M, Tacken F, As DJ. Optical evidence of many-body effects in the zincblende Al$_\'6dathrmx$Ga$_\'6dathrm1-x$N alloy system. Journal of Physics D: Applied Physics. 2021. doi:10.1088/1361-6463/abb97a
LibreCat: /record/23842
DOI: 10.1088/1361-6463/abb97a

Hajlaoui M, Ponzoni S, Deppe M, et al. Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. Scientific Reports. 2021;11. doi:10.1038/s41598-021-98569-6
LibreCat: /record/25227
DOI: 10.1038/s41598-021-98569-6

Meier F, Protte M, Baron E, et al. Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances. Published online 2021. doi:10.1063/5.0053865
LibreCat: /record/23843
DOI: 10.1063/5.0053865

Beloufa A, Bouguenna D, Kermas N, As DJ. A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1xN/AlN/GaN MOS-HEMTs. Journal of Electronic Materials. 2020:2008-2017. doi:10.1007/s11664-019-07927-8
LibreCat: /record/23838
DOI: 10.1007/s11664-019-07927-8

Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Photoluminescence LineShape Analysis of Highly nType Doped Zincblende GaN. physica status solidi (b). 2020. doi:10.1002/pssb.201900522
LibreCat: /record/23840
DOI: 10.1002/pssb.201900522

Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N. physica status solidi (b). 2020. doi:10.1002/pssb.201900532
LibreCat: /record/23841
DOI: 10.1002/pssb.201900532

Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm3. Physical Review Materials. 2019. doi:10.1103/physrevmaterials.3.104603
LibreCat: /record/23831
DOI: 10.1103/physrevmaterials.3.104603

Deppe M, Gerlach JW, Shvarkov S, et al. Germanium doping of cubic GaN grown by molecular beam epitaxy. Journal of Applied Physics. 2019. doi:10.1063/1.5066095
LibreCat: /record/8646
DOI: 10.1063/1.5066095

Buß JH, Schupp T, As DJ, Hägele D, Rudolph J. Optical excitation density dependence of spin dynamics in bulk cubic GaN. Journal of Applied Physics. 2019. doi:10.1063/1.5123914
LibreCat: /record/13965
DOI: 10.1063/1.5123914

Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm3. Physical Review Materials. 2019. doi:10.1103/physrevmaterials.3.104603
LibreCat: /record/13966
DOI: 10.1103/physrevmaterials.3.104603

Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N. physica status solidi (b). Published online 2019. doi:10.1002/pssb.201900532
LibreCat: /record/15444
DOI: 10.1002/pssb.201900532

Herval LKS, de Godoy MPF, Wecker T, As DJ. Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures. Journal of Luminescence. 2018;198:309-313. doi:10.1016/j.jlumin.2018.02.051
LibreCat: /record/4809
DOI: 10.1016/j.jlumin.2018.02.051

Blumenthal S, Reuter D, As DJ. Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(5). doi:10.1002/pssb.201700457
LibreCat: /record/7022
DOI: 10.1002/pssb.201700457

As DJ, Lischka K. Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications. In: Molecular Beam Epitaxy. Elsevier; 2018:95-114. doi:10.1016/b978-0-12-812136-8.00006-2
LibreCat: /record/4350
DOI: 10.1016/b978-0-12-812136-8.00006-2

Blumenthal S, Rieger T, Meertens D, Pawlis A, Reuter D, As DJ. Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy. physica status solidi (b). 2018;255(3):1600729. doi:https://doi.org/10.1002/pssb.201600729
LibreCat: /record/20588
DOI: https://doi.org/10.1002/pssb.201600729

Wecker T, Callsen G, Hoffmann A, Reuter D, As DJ. Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64G.36N Double Quantum Wells. physica status solidi (b). 2017;255(5). doi:10.1002/pssb.201700373
LibreCat: /record/4808
DOI: 10.1002/pssb.201700373