M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride on GrapheneCovered 3CSiC Substrates by PlasmaAssisted Molecular Beam Epitaxy,”10.1002/pssb.202300034__physica status solidi (b), vol. 260, no. 7, 2023, doi:10.1002/pssb.202300034 .
LibreCat: /record/46132
DOI: 10.1002/pssb.202300034

M. F. Zscherp et al., “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In<sub>x</sub>Ga<sub>1–x</sub>N,”10.1021/acsami.3c06319__ACS Applied Materials &;amp; Interfaces, vol. 15, no. 33, pp. 39513–39522, 2023, doi:10.1021/acsami.3c06319 .
LibreCat: /record/46741
DOI: 10.1021/acsami.3c06319

E. Baron et al., “Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function,”10.1063/5.0153091__Journal of Applied Physics, vol. 134, no. 7, 2023, doi:10.1063/5.0153091 .
LibreCat: /record/46573
DOI: 10.1063/5.0153091

F. Meier et al., “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks,”10.1002/pssb.202200508__physica status solidi (b), Art. no. 2200508, 2022, doi:10.1002/pssb.202200508 .
LibreCat: /record/35232
DOI: 10.1002/pssb.202200508

E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, and D. J. As, “Optical evidence of many-body effects in the zincblende Al$_\'6dathrmx$Ga$_\'6dathrm1-x$N alloy system,” Journal of Physics D: Applied Physics, 2021.
LibreCat: /record/23842
DOI: 10.1088/1361-6463/abb97a

M. Hajlaoui et al., “Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures,”10.1038/s41598-021-98569-6__Scientific Reports, vol. 11, Art. no. 19081, 2021, doi:10.1038/s41598-021-98569-6 .
LibreCat: /record/25227
DOI: 10.1038/s41598-021-98569-6

F. Meier et al., “Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001),”10.1063/5.0053865__AIP Advances, Art. no. 075013, 2021, doi:10.1063/5.0053865 .
LibreCat: /record/23843
DOI: 10.1063/5.0053865

A. Beloufa, D. Bouguenna, N. Kermas, and D. J. As, “A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1xN/AlN/GaN MOS-HEMTs,” Journal of Electronic Materials, pp. 2008–2017, 2020.
LibreCat: /record/23838
DOI: 10.1007/s11664-019-07927-8

E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Photoluminescence LineShape Analysis of Highly nType Doped Zincblende GaN,” physica status solidi (b), 2020.
LibreCat: /record/23840
DOI: 10.1002/pssb.201900522

M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N,” physica status solidi (b), 2020.
LibreCat: /record/23841
DOI: 10.1002/pssb.201900532

E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm3,” Physical Review Materials, 2019.
LibreCat: /record/23831
DOI: 10.1103/physrevmaterials.3.104603

M. Deppe et al., “Germanium doping of cubic GaN grown by molecular beam epitaxy,” Journal of Applied Physics, 2019.
LibreCat: /record/8646
DOI: 10.1063/1.5066095

J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, “Optical excitation density dependence of spin dynamics in bulk cubic GaN,” Journal of Applied Physics, 2019.
LibreCat: /record/13965
DOI: 10.1063/1.5123914

E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm3,” Physical Review Materials, 2019.
LibreCat: /record/13966
DOI: 10.1103/physrevmaterials.3.104603

M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N,”10.1002/pssb.201900532__physica status solidi (b), Art. no. 1900532, 2019, doi:10.1002/pssb.201900532 .
LibreCat: /record/15444
DOI: 10.1002/pssb.201900532

L. K. S. Herval, M. P. F. de Godoy, T. Wecker, and D. J. As, “Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures,” Journal of Luminescence, vol. 198, pp. 309–313, 2018.
LibreCat: /record/4809
DOI: 10.1016/j.jlumin.2018.02.051

S. Blumenthal, D. Reuter, and D. J. As, “Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,” physica status solidi (b), vol. 255, no. 5, 2018.
LibreCat: /record/7022
DOI: 10.1002/pssb.201700457

D. J. As and K. Lischka, “Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications,” in Molecular Beam Epitaxy, Elsevier, 2018, pp. 95–114.
LibreCat: /record/4350
DOI: 10.1016/b978-0-12-812136-8.00006-2

S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, and D. J. As, “Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy,”https://doi.org/10.1002/pssb.201600729__physica status solidi (b), vol. 255, no. 3, p. 1600729, 2018, doi:https://doi.org/10.1002/pssb.201600729 .
LibreCat: /record/20588
DOI: https://doi.org/10.1002/pssb.201600729

T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, and D. J. As, “Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64G.36N Double Quantum Wells,” physica status solidi (b), vol. 255, no. 5, 2017.
LibreCat: /record/4808
DOI: 10.1002/pssb.201700373