Polarization properties of single zinc-blende GaN/AlN quantum dots
S. Sergent, S. Kako, M. Bürger, T. Schupp, D.J. As, Y. Arakawa, Physical Review B (2014).

Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures
L. Hiller, T. Stauden, R.M. Kemper, J. Lindner, D.J. As, J. Pezoldt, Materials Science Forum 778–780 (2014) 730–733.

Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots
M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, D.J. As, Applied Physics Letters 102 (2013) 081105.

Transition energies and direct-indirect band gap crossing in zinc-blende AlxGxN
M. Landmann, E. Rauls, W.G. Schmidt, M. Röppischer, C. Cobet, N. Esser, T. Schupp, D.J. As, M. Feneberg, R. Goldhahn, Physical Review B 87 (2013).

Optical properties of cubic GaN from 1 to 20 eV
M. Feneberg, M. Röppischer, C. Cobet, N. Esser, J. Schörmann, T. Schupp, D.J. As, F. Hörich, J. Bläsing, A. Krost, R. Goldhahn, Physical Review B 85 (2012).

ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures
L. Hiller, T. Stauden, R.M. Kemper, J. Lindner, D.J. As, J. Pezoldt, Materials Science Forum 717–720 (2012) 901–904.

Band offsets in cubic GaN/AlN superlattices
C. Mietze, M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva, F.H. Julien, W.G. Schmidt, K. Lischka, D.J. As, Physical Review B 83 (2011).

Anti-phase domains in cubic GaN
R. Maria Kemper, T. Schupp, M. Häberlen, T. Niendorf, H.-J. Maier, A. Dempewolf, F. Bertram, J. Christen, R. Kirste, A. Hoffmann, J. Lindner, D. As, Journal of Applied Physics 110 (2011).

Magnetic characterization of conductance electrons in GaN
A. Scholle, S. Greulich-Weber, D.J. As, C. Mietze, N.T. Son, C. Hemmingsson, B. Monemar, E. Janzén, U. Gerstmann, S. Sanna, E. Rauls, W.G. Schmidt, Physica Status Solidi (B) 247 (2010) 1728–1731.

Schottky and Ohmic Contacts on Non-Polar Cubic GaN Epilayers
D.J. As, E. Tschumak, I. Laubenstein, R.M. Kemper, K. Lischka, in: Materials Research Society Symposium Proceedings, Materials Research Society, 2009, pp. 3–8.