Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports 11 (2021).

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).

A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1xN/AlN/GaN MOS-HEMTs
A. Beloufa, D. Bouguenna, N. Kermas, D.J. As, Journal of Electronic Materials (2020) 2008–2017.

Photoluminescence LineShape Analysis of Highly nType Doped Zincblende GaN
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physica Status Solidi (B) (2020).

Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).

Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm3
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials (2019).

Germanium doping of cubic GaN grown by molecular beam epitaxy
M. Deppe, J.W. Gerlach, S. Shvarkov, D. Rogalla, H.-W. Becker, D. Reuter, D.J. As, Journal of Applied Physics (2019).

Optical excitation density dependence of spin dynamics in bulk cubic GaN
J.H. Buß, T. Schupp, D.J. As, D. Hägele, J. Rudolph, Journal of Applied Physics (2019).

Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm3
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physical Review Materials (2019).

Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (b) (2019).

Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures
L.K.S. Herval, M.P.F. de Godoy, T. Wecker, D.J. As, Journal of Luminescence 198 (2018) 309–313.

Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2018).

Nonpolar Cubic III-nitrides: From the Basics of Growth to Device Applications
D.J. As, K. Lischka, in: Molecular Beam Epitaxy, Elsevier, 2018, pp. 95–114.

Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica Status Solidi (b) 255 (2018) 1600729.

Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64G.36N Double Quantum Wells
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2017).

Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures
T. Wecker, T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, D. Reuter, D.J. As, Journal of Crystal Growth 477 (2017) 149–153.

Incorporation of germanium for n-type doping of cubic GaN
M. Deppe, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) 254 (2017).

Picosecond Acoustics in Single Quantum Wells of Cubic GaN/(Al,Ga)N
T. Czerniuk, T. Ehrlich, T. Wecker, D.J. As, D.R. Yakovlev, A.V. Akimov, M. Bayer, Physical Review Applied 7 (2017).

Optical Properties of Germanium Doped Cubic GaN
D.J. As, M. Deppe, J. Gerlach, D. Reuter, MRS Advances 2 (2017) 283–288.

Electron spin dynamics in cubic GaN
J.H. Buß, T. Schupp, D.J. As, O. Brandt, D. Hägele, J. Rudolph, Physical Review B 94 (2016).