Nuclear radiation detectors on various type diamonds
F. Blum, A. Denisenko, R. Job, D. Borchert, W. Weber, J.V. Borany, U. Hilleringmann, W.R. Fahrner, in: IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.980), IEEE, 2002.

Floating gate structures as nonvolatile analog memory cells in 1.0;cm-LOCOS-CMOS technology with PZT dielectrica
A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15 (2002) 633–636.

Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon
U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.

CMOS compatible micromachining by dry silicon-etching techniques
S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 191–194.

Matching analysis of deposition defined 50-nm MOSFET's
J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.

Applications and implementations of neural networks in microelectronics-overview and status
K. Goser, U. Hilleringmann, U. Rueckert, in: [1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications, IEEE Comput. Soc. Press, 2002.

12 kV low current cascaded light triggered switch on one silicon chip
V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 46 (2002) 413–417.

Matching analysis of deposition defined 50-nm MOSFET's
J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.

Mesoscopic transport phenomena in ultrashort channel MOSFETs
G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics 43 (2002) 1245–1250.

Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications
R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related Materials 10 (2002) 511–514.

A structure definition technique for 25 nm lines of silicon and related materials
U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572.

Reactive ion etching of CVD-diamond for piezoresistive pressure sensors
R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.

Metallisierung und Kontakte
U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, Wiesbaden, 2002, pp. 131–151.

Nanometer Scale Lateral Structures of MOS Type Layers
U. Hilleringmann, T. Vieregge, J. Horstmann, in: Proceedings Micro. Tec, 2000, pp. 49–53.

High rate CVD-diamond etching for high temperature pressure sensor applications
R. Otterbach, U. Hilleringmann, in: 29th European Solid-State Device Research Conference, 1999, pp. 320–323.

Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors
J.T. Horstmann, U. Hilleringmann, K. Goser, in: 28th European Solid-State Device Research Conference, 1998, pp. 512–515.

CMOS-compatible organic light-emitting diodes
L.M.H. Heinrich, J. Muller, U. Hilleringmann, K.F. Goser, A. Holmes, D.-H. Hwang, R. Stern, IEEE Transactions on Electron Devices 44 (1997) 1249–1252.

Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission
J. Muller, G. Wirth, U. Hilleringmann, K. Goser, in: ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference, 1996, pp. 947–950.

Characterization and Matching Analysis of 50 nm-NMOS-Transistors
J.T. Horstmann, U. Hilleringmann, K. Goser, in: ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference, 1996, pp. 253–256.

ESSDERC’96, Bologna, Italy
J. Horstmann, U. Hilleringmann, K. Goser, in: Conf. Dig, 1996.