Nanosphere lithography for device fabrication
J. Lindner, SPIE Newsroom (2013).

Nickel Nanodot Arrays on Silicon formed by Nanosphere Lithography: A TEM Study
J. Pauly, J. Lindner, in: 2013.

Self-organized Fabrication of Periodic Nanocolumn Arrays on GaAs Surfaces
T. Riedl, J. Lindner, in: 2013.

Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques
J. Achtelik, W. Sievers, J. Lindner, Materials Science and Engineering: B 178 (2012) 635–638.

Growth of cubic GaN on 3C–SiC/Si (001) nanostructures
R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, D. Meertens, K. Tillmann, D.J. As, J. Lindner, Journal of Crystal Growth 378 (2012) 291–294.

Gyrotropic Metamaterials
C. Brodehl, S. Greulich-Weber, J. Lindner, in: 2012.

TEM investigation of GaN thin films grown on nanostructured 3C-SiC/Si(001) substrates
R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, K. Tillmann, T. Riedl, D. As, J. Lindner, in: 2012.

Nanosphere Lithography: State-of-the-art and Future Directions
J. Lindner, in: 2012.

TEM Characterization of Nickel Nanodot Arrays on Silicon formed by Nanosphere Lithography
J. Pauly, J. Lindner, in: 2012.

First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon
F. Zirkelbach, B. Stritzker, K. Nordlund, W.G. Schmidt, E. Rauls, J.K.N. Lindner, Physica Status Solidi (c) 9 (2012) 1968–1973.

ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures
L. Hiller, T. Stauden, R.M. Kemper, J. Lindner, D.J. As, J. Pezoldt, Materials Science Forum 717–720 (2012) 901–904.

Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering
M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 272 (2011) 322–325.

Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation
M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Physica Status Solidi (C) 8 (2011) 944–947.

Photoluminescence properties of Sm2+-doped BaB under hydrostatic pressure
M.C. Wiegand, W. Sievers, J. Lindner, T. Tröster, S. Schweizer, Journal of Luminescence 131 (2011) 2400–2403.

Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon
F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 84 (2011).

Anti-phase domains in cubic GaN
R. Maria Kemper, T. Schupp, M. Häberlen, T. Niendorf, H.-J. Maier, A. Dempewolf, F. Bertram, J. Christen, R. Kirste, A. Hoffmann, J. Lindner, D. As, Journal of Applied Physics 110 (2011).

Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates
R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J. Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.

Plasma modification of nanosphere lithography masks made of polystyrene beads
D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 12 (2010) 740–744.

Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)
E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010).

Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers
V.I. Zdravkov, J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, J. Lindner, J. Moosburger-Will, E. Nold, R. Morari, V.V. Ryazanov, A.S. Sidorenko, S. Horn, R. Tidecks, L.R. Tagirov, Physical Review B 82 (2010).