Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices
D. Reuter, C. Meier, M.A.S. Álvarez, A.D. Wieck, Applied Physics Letters 79 (2001) 377–379.

Tunable backscattering in quantum Hall systems induced by neighbouring gates
C. Heidtkamp, C. Meier, D. Reuter, M. Versen, S. Hoch, D. Diaconescu, A.D. Wieck, Physica B: Condensed Matter 284–288 (2000) 1728–1729.

A new peak in the bend resistance of a four-terminal device written by FIB implantation
D. Diaconescu, S. Hoch, C. Heidtkamp, C. Meier, D. Reuter, A.D. Wieck, Physica B: Condensed Matter 284–288 (2000) 1906–1907.

Laterally resolved doping by focused ion beam implantation
D. Reuter, C. Meier, M.A. Alvarez, J. Koch, A.D. Wieck, in: IECON Proc. , 2000, p. 1878.

Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells
S. Eshlaghi, C. Meier, D. Suter, D. Reuter, A.D. Wieck, Journal of Applied Physics 86 (1999) 6605–6607.

Robustness of the Quantum Hall Effect, Sample Size Versus Sample Topology, and Quality Control Management of III–V Molecular Beam Epitaxy
R.D. Tscheuschner, S. Hoch, E. Leschinsky, C. Meier, S. Theis, A.D. Wieck, International Journal of Modern Physics B 12 (1998) 1147–1170.