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Lo F-Y, Huang C-D, Chou K-C, et al. Structural, optical, and magnetic properties of highly-resistive Sm-implanted GaN thin films. Journal of Applied Physics. 2014;116(4). doi:10.1063/1.4891226
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Carrad DJ, Burke AM, Klochan O, et al. Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot. Physical Review B. 2014;89(15). doi:10.1103/physrevb.89.155313
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Kuznetsova MS, Flisinski K, Gerlovin IY, et al. Nuclear magnetic resonances in (In,Ga)As/GaAs quantum dots studied by resonant optical pumping. Physical Review B. 2014;89(12). doi:10.1103/physrevb.89.125304
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Varwig S, René A, Economou SE, et al. All-optical tomography of electron spins in (In,Ga)As quantum dots. Physical Review B. 2014;89(8). doi:10.1103/physrevb.89.081310
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Labud PA, Ludwig A, Wieck AD, Bester G, Reuter D. Direct Quantitative Electrical Measurement of Many-Body Interactions in Exciton Complexes in InAs Quantum Dots. Physical Review Letters. 2014;112(4). doi:10.1103/physrevlett.112.046803
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Bürger M, Callsen G, Kure T, et al. Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks. physica status solidi (c). 2014;11(3-4):790-793. doi:10.1002/pssc.201300411
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Bürger M, Lindner J, Reuter D, As DJ. Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process. In: ; 2014.
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Lo F-Y, Guo J-Y, Huang C-D, et al. Evidences of defect contribution in magnetically ordered Sm-implanted GaN. Current Applied Physics. 2013;14:-. doi:10.1016/j.cap.2013.11.051
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Steinhoff A, Kurtze H, Gartner P, et al. Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots. Physical Review B. 2013;88(20). doi:10.1103/physrevb.88.205309
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Henn T, Kiessling T, Ossau W, Molenkamp LW, Reuter D, Wieck AD. Picosecond real-space imaging of electron spin diffusion in GaAs. Physical Review B. 2013;88(19). doi:10.1103/physrevb.88.195202
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Henn T, Heckel A, Beck M, et al. Hot carrier effects on the magneto-optical detection of electron spins in GaAs. Physical Review B. 2013;88(8). doi:10.1103/physrevb.88.085303
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Buß JH, Rudolph J, Shvarkov S, et al. Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons. Applied Physics Letters. 2013;103(9). doi:10.1063/1.4819767
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Carrad DJ, Burke AM, Reece PJ, et al. The effect of (N)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices. Journal of Physics: Condensed Matter. 2013;25(32). doi:10.1088/0953-8984/25/32/325304
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Höpfner H, Fritsche C, Ludwig A, et al. Spin relaxation length in quantum dot spin LEDs. physica status solidi (c). 2013;10(9):1214-1217. doi:10.1002/pssc.201200689
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Prechtel JH, Kuhlmann AV, Houel J, et al. Frequency-Stabilized Source of Single Photons from a Solid-State Qubit. Physical Review X. 2013;3(4). doi:10.1103/physrevx.3.041006
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Moody G, Singh R, Li H, et al. Biexcitons in semiconductor quantum dot ensembles. physica status solidi (b). 2013;250(9):1753-1759. doi:10.1002/pssb.201200725
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Wortmann M, Ludwig A, Meijer J, Reuter D, Wieck AD. High-resolution mass spectrometer for liquid metal ion sources. Review of Scientific Instruments. 2013;84(9). doi:10.1063/1.4822275
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Kuhlmann AV, Houel J, Ludwig A, et al. Charge noise and spin noise in a semiconductor quantum device. Nature Physics. 2013;9(9):570-575. doi:10.1038/nphys2688
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Kuhlmann AV, Houel J, Brunner D, et al. A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode. Review of Scientific Instruments. 2013;84(7). doi:10.1063/1.4813879
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