Jonas, B., Heinze, D. F., Schöll, E., Kallert, P., Langer, T., Krehs, S., Widhalm, A., Jöns, K., Reuter, D., Schumacher, S., &; Zrenner, A. (2022). Nonlinear down-conversion in a single quantum dot. Nature Communications, 13(1), Article 1387.https://doi.org/10.1038/s41467-022-28993-3 
LibreCat: /record/40523
DOI: 10.1038/s41467-022-28993-3

Jonas, B., Heinze, D. F., Schöll, E., Kallert, P., Langer, T., Krehs, S., Widhalm, A., Jöns, K., Reuter, D., &; Zrenner, A. (2022). Nonlinear down-conversion in a single quantum dot. LibreCat University.https://doi.org/10.5281/ZENODO.6024228 
LibreCat: /record/40428
DOI: 10.5281/ZENODO.6024228

Henksmeier, T., Eppinger, M., Reineke, B., Zentgraf, T., Meier, C., &; Reuter, D. (2021). Selective Etching of (111)B-Oriented AlxGxAs-Layers for Epitaxial Lift-Off. Physica Status Solidi (A), 218(3), 2000408.https://doi.org/10.1002/pssa.202000408 
LibreCat: /record/20592
DOI: https://doi.org/10.1002/pssa.202000408

Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., &; As, D. J. (2021). Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances.https://doi.org/10.1063/5.0053865 
LibreCat: /record/22533
DOI: 10.1063/5.0053865

Evers, E., Kopteva, N. E., Yugova, I. A., Yakovlev, D. R., Reuter, D., Wieck, A. D.,https://doi.org/10.1038/s41534-021-00395-1__Greilich, A. (2021). Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation. Npj Quantum Information.https://doi.org/10.1038/s41534-021-00395-1 
LibreCat: /record/22003
DOI: 10.1038/s41534-021-00395-1

Schall, J., Deconinck, M., Bart, N., Florian, M., Helversen, M., Dangel, C.,https://doi.org/10.1002/qute.202100002__Reitzenstein, S. (2021). Bright Electrically Controllable QuantumDotMolecule Devices Fabricated by In Situ ElectronBeam Lithography. Advanced Quantum Technologies.https://doi.org/10.1002/qute.202100002 
LibreCat: /record/22004
DOI: 10.1002/qute.202100002

Widhalm, A., Krehs, S., Siebert, D., Sharma, N. L., Langer, T., Jonas, B., Reuter, D., Thiede, A., Förstner, J., &; Zrenner, A. (2021). Optoelectronic sampling of ultrafast electric transients with single quantum dots. Applied Physics Letters, 119, 181109.https://doi.org/10.1063/5.0061358 
LibreCat: /record/27099
DOI: 10.1063/5.0061358

Schall, J., Deconinck, M., Bart, N., Florian, M., Helversen, M., Dangel, C., Schmidt, R., Bremer, L., Bopp, F., Hüllen, I., Gies, C., Reuter, D., Wieck, A. D., Rodt, S., Finley, J. J., Jahnke, F., Ludwig, A., &; Reitzenstein, S. (2021). Bright Electrically Controllable QuantumDotMolecule Devices Fabricated by In Situ ElectronBeam Lithography. Advanced Quantum Technologies, 4(6), Article 2100002.https://doi.org/10.1002/qute.202100002 
LibreCat: /record/46135
DOI: 10.1002/qute.202100002

Hajlaoui, M., Ponzoni, S., Deppe, M., Henksmeier, T., As, D. J., Reuter, D., Zentgraf, T., Springholz, G., Schneider, C. M., Cramm, S., &; Cinchetti, M. (2021). Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. Scientific Reports, 11, Article 19081.https://doi.org/10.1038/s41598-021-98569-6 
LibreCat: /record/25227
DOI: 10.1038/s41598-021-98569-6

Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., &; As, D. J. (2021). Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances, Article 075013.https://doi.org/10.1063/5.0053865 
LibreCat: /record/23843
DOI: 10.1063/5.0053865

Wang, D. Q., Reuter, D., Wieck, A. D., Hamilton, A. R., &; Klochan, O. (2020). Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential. Applied Physics Letters.https://doi.org/10.1063/5.0009462 
LibreCat: /record/17433
DOI: 10.1063/5.0009462

Kunnathully, V. S., Riedl, T., Trapp, A., Langer, T., Reuter, D., &; Lindner, J. K. N. (2020). InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth.https://doi.org/10.1016/j.jcrysgro.2020.125597 
LibreCat: /record/17434
DOI: 10.1016/j.jcrysgro.2020.125597

Geier, M., Freudenfeld, J., Silva, J. T., Umansky, V., Reuter, D., Wieck, A. D.,https://doi.org/10.1103/physrevb.101.165429__Ludwig, S. (2020). Electrostatic potential shape of gate-defined quantum point contacts. Physical Review B.https://doi.org/10.1103/physrevb.101.165429 
LibreCat: /record/17435
DOI: 10.1103/physrevb.101.165429

Javaid Iqbal, M., Reuter, D., Wieck, A. D., &; van der Wal, C. (2020). Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure. The European Physical Journal Applied Physics.https://doi.org/10.1051/epjap/2020190202 
LibreCat: /record/17436
DOI: 10.1051/epjap/2020190202

Ebler, C., Labud, P. A., Rai, A. K., Reuter, D., Wieck, A. D., &; Ludwig, A. (2020). Electrical detection of excitonic states by time-resolved conductance measurements. Physical Review B.https://doi.org/10.1103/physrevb.101.125303 
LibreCat: /record/17437
DOI: 10.1103/physrevb.101.125303

Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., &; As, D. J. (2020). Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N. Physica Status Solidi (B).https://doi.org/10.1002/pssb.201900532 
LibreCat: /record/23841
DOI: 10.1002/pssb.201900532

Riha, C., Buchholz, S. S., Chiatti, O., Wieck, A. D., Reuter, D., &; Fischer, S. F. (2020). Excess noise in      Al x https://doi.org/10.1063/5.0002247__Ga  1https://doi.org/10.1063/5.0002247__xAs/GaAs based quantum rings. Applied Physics Letters.https://doi.org/10.1063/5.0002247 
LibreCat: /record/17995
DOI: 10.1063/5.0002247

Schuster, J., Kim, T. Y., Batke, E., Reuter, D., &; Wieck, A. D. (2020). Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor Science and Technology.https://doi.org/10.1088/1361-6641/ab89e1 
LibreCat: /record/21796
DOI: 10.1088/1361-6641/ab89e1

Riedl, T., Kunnathully, V. S., Trapp, A., Langer, T., Reuter, D., &; Lindner, J. K. N. (2020). Strain-driven InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials.https://doi.org/10.1103/physrevmaterials.4.014602 
LibreCat: /record/21797
DOI: 10.1103/physrevmaterials.4.014602

Riedl, T., Kunnathully, V. S., Trapp, A., Langer, T., Reuter, D., &; Lindner, J. (2020). Strain-driven InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials, 4(1), Article 014602.https://doi.org/10.1103/physrevmaterials.4.014602 
LibreCat: /record/34093
DOI: 10.1103/physrevmaterials.4.014602