B. Jonas et al., “Nonlinear down-conversion in a single quantum dot,”10.1038/s41467-022-28993-3__Nature Communications, vol. 13, no. 1, Art. no. 1387, 2022, doi:10.1038/s41467-022-28993-3 .
LibreCat: /record/40523
DOI: 10.1038/s41467-022-28993-3

B. Jonas et al., Nonlinear down-conversion in a single quantum dot. LibreCat University, 2022.
LibreCat: /record/40428
DOI: 10.5281/ZENODO.6024228

T. Henksmeier, M. Eppinger, B. Reineke, T. Zentgraf, C. Meier, and D. Reuter, “Selective Etching of (111)B-Oriented AlxGxAs-Layers for Epitaxial Lift-Off,” physica status solidi (a), vol. 218, no. 3, p. 2000408, 2021.
LibreCat: /record/20592
DOI: https://doi.org/10.1002/pssa.202000408

F. Meier et al., “Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001),” AIP Advances, 2021.
LibreCat: /record/22533
DOI: 10.1063/5.0053865

E. Evers et al., “Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation,” npj Quantum Information, 2021.
LibreCat: /record/22003
DOI: 10.1038/s41534-021-00395-1

J. Schall et al., “Bright Electrically Controllable QuantumDotMolecule Devices Fabricated by In Situ ElectronBeam Lithography,” Advanced Quantum Technologies, 2021.
LibreCat: /record/22004
DOI: 10.1002/qute.202100002

A. Widhalm et al., “Optoelectronic sampling of ultrafast electric transients with single quantum dots,”10.1063/5.0061358__Applied Physics Letters, vol. 119, p. 181109, 2021, doi:10.1063/5.0061358 .
LibreCat: /record/27099
DOI: 10.1063/5.0061358

J. Schall et al., “Bright Electrically Controllable QuantumDotMolecule Devices Fabricated by In Situ ElectronBeam Lithography,”10.1002/qute.202100002__Advanced Quantum Technologies, vol. 4, no. 6, Art. no. 2100002, 2021, doi:10.1002/qute.202100002 .
LibreCat: /record/46135
DOI: 10.1002/qute.202100002

M. Hajlaoui et al., “Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures,”10.1038/s41598-021-98569-6__Scientific Reports, vol. 11, Art. no. 19081, 2021, doi:10.1038/s41598-021-98569-6 .
LibreCat: /record/25227
DOI: 10.1038/s41598-021-98569-6

F. Meier et al., “Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001),”10.1063/5.0053865__AIP Advances, Art. no. 075013, 2021, doi:10.1063/5.0053865 .
LibreCat: /record/23843
DOI: 10.1063/5.0053865

D. Q. Wang, D. Reuter, A. D. Wieck, A. R. Hamilton, and O. Klochan, “Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential,” Applied Physics Letters, 2020.
LibreCat: /record/17433
DOI: 10.1063/5.0009462

V. S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, and J. K. N. Lindner, “InAs heteroepitaxy on nanopillar-patterned GaAs (111)A,” Journal of Crystal Growth, 2020.
LibreCat: /record/17434
DOI: 10.1016/j.jcrysgro.2020.125597

M. Geier et al., “Electrostatic potential shape of gate-defined quantum point contacts,” Physical Review B, 2020.
LibreCat: /record/17435
DOI: 10.1103/physrevb.101.165429

M. Javaid Iqbal, D. Reuter, A. D. Wieck, and C. van der Wal, “Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure,” The European Physical Journal Applied Physics, 2020.
LibreCat: /record/17436
DOI: 10.1051/epjap/2020190202

C. Ebler, P. A. Labud, A. K. Rai, D. Reuter, A. D. Wieck, and A. Ludwig, “Electrical detection of excitonic states by time-resolved conductance measurements,” Physical Review B, 2020.
LibreCat: /record/17437
DOI: 10.1103/physrevb.101.125303

M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N,” physica status solidi (b), 2020.
LibreCat: /record/23841
DOI: 10.1002/pssb.201900532

C. Riha, S. S. Buchholz, O. Chiatti, A. D. Wieck, D. Reuter, and S. F. Fischer, “Excess noise in      Al x   Ga  1  xAs/GaAs based quantum rings,” Applied Physics Letters, 2020.
LibreCat: /record/17995
DOI: 10.1063/5.0002247

J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields,” Semiconductor Science and Technology, 2020.
LibreCat: /record/21796
DOI: 10.1088/1361-6641/ab89e1

T. Riedl, V. S. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. K. N. Lindner, “Strain-driven InAs island growth on top of GaAs(111) nanopillars,” Physical Review Materials, 2020.
LibreCat: /record/21797
DOI: 10.1103/physrevmaterials.4.014602

T. Riedl, V. S. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. Lindner, “Strain-driven InAs island growth on top of GaAs(111) nanopillars,”10.1103/physrevmaterials.4.014602__Physical Review Materials, vol. 4, no. 1, Art. no. 014602, 2020, doi:10.1103/physrevmaterials.4.014602 .
LibreCat: /record/34093
DOI: 10.1103/physrevmaterials.4.014602