Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (b) (2019).
LibreCat: /record/15444
DOI: 10.1002/pssb.201900532

Strain Relaxation in InAs Nanoislands on top of GaAs (111) A Nanopillars
T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, in: 2018.
LibreCat: /record/4413

MBE Growth of InAs on Nanopillar-Patterned GaAs (111) A 
T. Riedl, V. Kunnathully, A. Trapp, D. Reuter, J. Lindner, in: 2018.
LibreCat: /record/4414

Decay and revival of electron spin polarization in an ensemble of (In,Ga)As quantum dots
E. Evers, V.V. Belykh, N.E. Kopteva, I.A. Yugova, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B 98 (2018).
LibreCat: /record/7008
DOI: 10.1103/physrevb.98.075309

Interlayer charge transfer in n-modulation doped Al1x Ga x As–GaAs single heterostructures
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 33 (2018).
LibreCat: /record/7009
DOI: 10.1088/1361-6641/aad83d

Basic Requirements of Spin-Flip Raman Scattering on Excitonic Resonances and Its Modulation through Additional High-Energy Illumination in Semiconductor Heterostructures
J. Debus, D. Kudlacik, V.F. Sapega, T.S. Shamirzaev, D.R. Yakovlev, D. Reuter, A.D. Wieck, A. Waag, M. Bayer, Physics of the Solid State 60 (2018) 1611–1617.
LibreCat: /record/7010
DOI: 10.1134/s1063783418080036

Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates
A. Trapp, D. Reuter, Journal of Vacuum Science &; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (2018).
LibreCat: /record/7018
DOI: 10.1116/1.5012957

Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks
V. Zolatanosha, D. Reuter, Journal of Vacuum Science &; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36 (2018).
LibreCat: /record/7019
DOI: 10.1116/1.5013650

Spin inertia of resident and photoexcited carriers in singly charged quantum dots
E.A. Zhukov, E. Kirstein, D.S. Smirnov, D.R. Yakovlev, M.M. Glazov, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, Physical Review B 98 (2018).
LibreCat: /record/7021
DOI: 10.1103/physrevb.98.121304

Optical Properties of Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2018).
LibreCat: /record/7022
DOI: 10.1002/pssb.201700457

Theory of spin inertia in singly charged quantum dots
D.S. Smirnov, E.A. Zhukov, E. Kirstein, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, M.M. Glazov, Physical Review B 98 (2018).
LibreCat: /record/6505
DOI: 10.1103/physrevb.98.125306

Ultrafast electric phase control of a single exciton qubit
A. Widhalm, A. Mukherjee, S. Krehs, N. Sharma, P. Kölling, A. Thiede, D. Reuter, J. Förstner, A. Zrenner, Applied Physics Letters 112 (2018) 111105.
LibreCat: /record/3427
DOI: 10.1063/1.5020364

Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica Status Solidi (b) 255 (2018) 1600729.
LibreCat: /record/20588
DOI: https://doi.org/10.1002/pssb.201600729

Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64G.36N Double Quantum Wells
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2017).
LibreCat: /record/4808
DOI: 10.1002/pssb.201700373

Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures
T. Wecker, T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, D. Reuter, D.J. As, Journal of Crystal Growth 477 (2017) 149–153.
LibreCat: /record/4810
DOI: 10.1016/j.jcrysgro.2017.01.022

Incorporation of germanium for n-type doping of cubic GaN
M. Deppe, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) 254 (2017).
LibreCat: /record/4811
DOI: 10.1002/pssb.201600700

Optical Properties of Germanium Doped Cubic GaN
D.J. As, M. Deppe, J. Gerlach, D. Reuter, MRS Advances 2 (2017) 283–288.
LibreCat: /record/4813
DOI: 10.1557/adv.2016.637

Overcoming Ehrlich-Schwöbel barrier in (1f1f1)A GaAs molecular beam epitaxy
J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 481 (2017) 7–10.
LibreCat: /record/7020
DOI: 10.1016/j.jcrysgro.2017.10.029

Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures
V. Zolatanosha, D. Reuter, Microelectronic Engineering 180 (2017) 35–39.
LibreCat: /record/7026
DOI: 10.1016/j.mee.2017.05.053

Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy
S. Scholz, R. Schott, P.A. Labud, C. Somsen, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 470 (2017) 46–50.
LibreCat: /record/7027
DOI: 10.1016/j.jcrysgro.2017.04.013