Nonlinear down-conversion in a single quantum dot
B. Jonas, D.F. Heinze, E. Schöll, P. Kallert, T. Langer, S. Krehs, A. Widhalm, K. Jöns, D. Reuter, S. Schumacher, A. Zrenner, Nature Communications 13 (2022).

Nonlinear down-conversion in a single quantum dot
B. Jonas, D.F. Heinze, E. Schöll, P. Kallert, T. Langer, S. Krehs, A. Widhalm, K. Jöns, D. Reuter, A. Zrenner, Nonlinear Down-Conversion in a Single Quantum Dot, LibreCat University, 2022.

Selective Etching of (111)B-Oriented AlxGxAs-Layers for Epitaxial Lift-Off
T. Henksmeier, M. Eppinger, B. Reineke, T. Zentgraf, C. Meier, D. Reuter, Physica Status Solidi (A) 218 (2021) 2000408.

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).

Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation
E. Evers, N.E. Kopteva, I.A. Yugova, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, Npj Quantum Information (2021).

Bright Electrically Controllable QuantumDotMolecule Devices Fabricated by In Situ ElectronBeam Lithography
J. Schall, M. Deconinck, N. Bart, M. Florian, M. Helversen, C. Dangel, R. Schmidt, L. Bremer, F. Bopp, I. Hüllen, C. Gies, D. Reuter, A.D. Wieck, S. Rodt, J.J. Finley, F. Jahnke, A. Ludwig, S. Reitzenstein, Advanced Quantum Technologies (2021).

Optoelectronic sampling of ultrafast electric transients with single quantum dots
A. Widhalm, S. Krehs, D. Siebert, N.L. Sharma, T. Langer, B. Jonas, D. Reuter, A. Thiede, J. Förstner, A. Zrenner, Applied Physics Letters 119 (2021) 181109.

Bright Electrically Controllable QuantumDotMolecule Devices Fabricated by In Situ ElectronBeam Lithography
J. Schall, M. Deconinck, N. Bart, M. Florian, M. Helversen, C. Dangel, R. Schmidt, L. Bremer, F. Bopp, I. Hüllen, C. Gies, D. Reuter, A.D. Wieck, S. Rodt, J.J. Finley, F. Jahnke, A. Ludwig, S. Reitzenstein, Advanced Quantum Technologies 4 (2021).

Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports 11 (2021).

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).

Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
D.Q. Wang, D. Reuter, A.D. Wieck, A.R. Hamilton, O. Klochan, Applied Physics Letters (2020).

InAs heteroepitaxy on nanopillar-patterned GaAs (111)A
V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner, Journal of Crystal Growth (2020).

Electrostatic potential shape of gate-defined quantum point contacts
M. Geier, J. Freudenfeld, J.T. Silva, V. Umansky, D. Reuter, A.D. Wieck, P.W. Brouwer, S. Ludwig, Physical Review B (2020).

Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure
M. Javaid Iqbal, D. Reuter, A.D. Wieck, C. van der Wal, The European Physical Journal Applied Physics (2020).

Electrical detection of excitonic states by time-resolved conductance measurements
C. Ebler, P.A. Labud, A.K. Rai, D. Reuter, A.D. Wieck, A. Ludwig, Physical Review B (2020).

Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).

Excess noise in      Al x   Ga  1  xAs/GaAs based quantum rings
C. Riha, S.S. Buchholz, O. Chiatti, A.D. Wieck, D. Reuter, S.F. Fischer, Applied Physics Letters (2020).

Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2020).

Strain-driven InAs island growth on top of GaAs(111) nanopillars
T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner, Physical Review Materials (2020).

Strain-driven InAs island growth on top of GaAs(111) nanopillars
T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J. Lindner, Physical Review Materials 4 (2020).