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Jonas B, Heinze DF, Schöll E, et al. Nonlinear Down-Conversion in a Single Quantum Dot. LibreCat University; 2022. doi:10.5281/ZENODO.6024228

Henksmeier T, Eppinger M, Reineke B, Zentgraf T, Meier C, Reuter D. Selective Etching of (111)B-Oriented AlxGxAs-Layers for Epitaxial Lift-Off. physica status solidi (a). 2021;218(3):2000408. doi:https://doi.org/10.1002/pssa.202000408

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Hajlaoui M, Ponzoni S, Deppe M, et al. Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. Scientific Reports. 2021;11. doi:10.1038/s41598-021-98569-6

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Wang DQ, Reuter D, Wieck AD, Hamilton AR, Klochan O. Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential. Applied Physics Letters. 2020. doi:10.1063/5.0009462

Kunnathully VS, Riedl T, Trapp A, Langer T, Reuter D, Lindner JKN. InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth. 2020. doi:10.1016/j.jcrysgro.2020.125597

Geier M, Freudenfeld J, Silva JT, et al. Electrostatic potential shape of gate-defined quantum point contacts. Physical Review B. 2020. doi:10.1103/physrevb.101.165429

Javaid Iqbal M, Reuter D, Wieck AD, van der Wal C. Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure. The European Physical Journal Applied Physics. 2020. doi:10.1051/epjap/2020190202

Ebler C, Labud PA, Rai AK, Reuter D, Wieck AD, Ludwig A. Electrical detection of excitonic states by time-resolved conductance measurements. Physical Review B. 2020. doi:10.1103/physrevb.101.125303

Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N. physica status solidi (b). 2020. doi:10.1002/pssb.201900532

Riha C, Buchholz SS, Chiatti O, Wieck AD, Reuter D, Fischer SF. Excess noise in      Al x 10.1063/5.0002247__Ga  110.1063/5.0002247__xAs/GaAs based quantum rings. Applied Physics Letters. 2020. doi:10.1063/5.0002247

Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor Science and Technology. 2020. doi:10.1088/1361-6641/ab89e1

Riedl T, Kunnathully VS, Trapp A, Langer T, Reuter D, Lindner JKN. Strain-driven InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials. 2020. doi:10.1103/physrevmaterials.4.014602

Riedl T, Kunnathully VS, Trapp A, Langer T, Reuter D, Lindner J. Strain-driven InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials. 2020;4(1). doi:10.1103/physrevmaterials.4.014602