Jonas, B., Heinze, D. F., Schöll, E., Kallert, P., Langer, T., Krehs, S., Widhalm, A., Jöns, K., Reuter, D., Schumacher, S., &; Zrenner, A. (2022). Nonlinear down-conversion in a single quantum dot. Nature Communications, 13(1), Article 1387.https://doi.org/10.1038/s41467-022-28993-3 

Jonas, B., Heinze, D. F., Schöll, E., Kallert, P., Langer, T., Krehs, S., Widhalm, A., Jöns, K., Reuter, D., &; Zrenner, A. (2022). Nonlinear down-conversion in a single quantum dot. LibreCat University.https://doi.org/10.5281/ZENODO.6024228 

Henksmeier, T., Eppinger, M., Reineke, B., Zentgraf, T., Meier, C., &; Reuter, D. (2021). Selective Etching of (111)B-Oriented AlxGxAs-Layers for Epitaxial Lift-Off. Physica Status Solidi (A), 218(3), 2000408.https://doi.org/10.1002/pssa.202000408 

Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., &; As, D. J. (2021). Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances.https://doi.org/10.1063/5.0053865 

Evers, E., Kopteva, N. E., Yugova, I. A., Yakovlev, D. R., Reuter, D., Wieck, A. D.,https://doi.org/10.1038/s41534-021-00395-1__Greilich, A. (2021). Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation. Npj Quantum Information.https://doi.org/10.1038/s41534-021-00395-1 

Schall, J., Deconinck, M., Bart, N., Florian, M., Helversen, M., Dangel, C.,https://doi.org/10.1002/qute.202100002__Reitzenstein, S. (2021). Bright Electrically Controllable QuantumDotMolecule Devices Fabricated by In Situ ElectronBeam Lithography. Advanced Quantum Technologies.https://doi.org/10.1002/qute.202100002 

Widhalm, A., Krehs, S., Siebert, D., Sharma, N. L., Langer, T., Jonas, B., Reuter, D., Thiede, A., Förstner, J., &; Zrenner, A. (2021). Optoelectronic sampling of ultrafast electric transients with single quantum dots. Applied Physics Letters, 119, 181109.https://doi.org/10.1063/5.0061358 

Schall, J., Deconinck, M., Bart, N., Florian, M., Helversen, M., Dangel, C., Schmidt, R., Bremer, L., Bopp, F., Hüllen, I., Gies, C., Reuter, D., Wieck, A. D., Rodt, S., Finley, J. J., Jahnke, F., Ludwig, A., &; Reitzenstein, S. (2021). Bright Electrically Controllable QuantumDotMolecule Devices Fabricated by In Situ ElectronBeam Lithography. Advanced Quantum Technologies, 4(6), Article 2100002.https://doi.org/10.1002/qute.202100002 

Hajlaoui, M., Ponzoni, S., Deppe, M., Henksmeier, T., As, D. J., Reuter, D., Zentgraf, T., Springholz, G., Schneider, C. M., Cramm, S., &; Cinchetti, M. (2021). Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures. Scientific Reports, 11, Article 19081.https://doi.org/10.1038/s41598-021-98569-6 

Meier, F., Protte, M., Baron, E., Feneberg, M., Goldhahn, R., Reuter, D., &; As, D. J. (2021). Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001). AIP Advances, Article 075013.https://doi.org/10.1063/5.0053865 

Wang, D. Q., Reuter, D., Wieck, A. D., Hamilton, A. R., &; Klochan, O. (2020). Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential. Applied Physics Letters.https://doi.org/10.1063/5.0009462 

Kunnathully, V. S., Riedl, T., Trapp, A., Langer, T., Reuter, D., &; Lindner, J. K. N. (2020). InAs heteroepitaxy on nanopillar-patterned GaAs (111)A. Journal of Crystal Growth.https://doi.org/10.1016/j.jcrysgro.2020.125597 

Geier, M., Freudenfeld, J., Silva, J. T., Umansky, V., Reuter, D., Wieck, A. D.,https://doi.org/10.1103/physrevb.101.165429__Ludwig, S. (2020). Electrostatic potential shape of gate-defined quantum point contacts. Physical Review B.https://doi.org/10.1103/physrevb.101.165429 

Javaid Iqbal, M., Reuter, D., Wieck, A. D., &; van der Wal, C. (2020). Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure. The European Physical Journal Applied Physics.https://doi.org/10.1051/epjap/2020190202 

Ebler, C., Labud, P. A., Rai, A. K., Reuter, D., Wieck, A. D., &; Ludwig, A. (2020). Electrical detection of excitonic states by time-resolved conductance measurements. Physical Review B.https://doi.org/10.1103/physrevb.101.125303 

Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., &; As, D. J. (2020). Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N. Physica Status Solidi (B).https://doi.org/10.1002/pssb.201900532 

Riha, C., Buchholz, S. S., Chiatti, O., Wieck, A. D., Reuter, D., &; Fischer, S. F. (2020). Excess noise in      Al x https://doi.org/10.1063/5.0002247__Ga  1https://doi.org/10.1063/5.0002247__xAs/GaAs based quantum rings. Applied Physics Letters.https://doi.org/10.1063/5.0002247 

Schuster, J., Kim, T. Y., Batke, E., Reuter, D., &; Wieck, A. D. (2020). Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor Science and Technology.https://doi.org/10.1088/1361-6641/ab89e1 

Riedl, T., Kunnathully, V. S., Trapp, A., Langer, T., Reuter, D., &; Lindner, J. K. N. (2020). Strain-driven InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials.https://doi.org/10.1103/physrevmaterials.4.014602 

Riedl, T., Kunnathully, V. S., Trapp, A., Langer, T., Reuter, D., &; Lindner, J. (2020). Strain-driven InAs island growth on top of GaAs(111) nanopillars. Physical Review Materials, 4(1), Article 014602.https://doi.org/10.1103/physrevmaterials.4.014602