Theory of spin inertia in singly charged quantum dots
D.S. Smirnov, E.A. Zhukov, E. Kirstein, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, M.M. Glazov, Physical Review B 98 (2018).

Ultrafast electric phase control of a single exciton qubit
A. Widhalm, A. Mukherjee, S. Krehs, N. Sharma, P. Kölling, A. Thiede, D. Reuter, J. Förstner, A. Zrenner, Applied Physics Letters 112 (2018) 111105.

Stacked Self-Assembled Cubic GaN Quantum Dots Grown by Molecular Beam Epitaxy
S. Blumenthal, T. Rieger, D. Meertens, A. Pawlis, D. Reuter, D.J. As, Physica Status Solidi (b) 255 (2018) 1600729.

Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64G.36N Double Quantum Wells
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, D.J. As, Physica Status Solidi (B) 255 (2017).

Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures
T. Wecker, T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, D. Reuter, D.J. As, Journal of Crystal Growth 477 (2017) 149–153.

Incorporation of germanium for n-type doping of cubic GaN
M. Deppe, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) 254 (2017).

Optical Properties of Germanium Doped Cubic GaN
D.J. As, M. Deppe, J. Gerlach, D. Reuter, MRS Advances 2 (2017) 283–288.

Overcoming Ehrlich-Schwöbel barrier in (1f1f1)A GaAs molecular beam epitaxy
J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 481 (2017) 7–10.

Robust Si 3 N 4 masks for 100 nm selective area epitaxy of GaAs-based nanostructures
V. Zolatanosha, D. Reuter, Microelectronic Engineering 180 (2017) 35–39.

Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy
S. Scholz, R. Schott, P.A. Labud, C. Somsen, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 470 (2017) 46–50.

Spin dynamics of quadrupole nuclei in InGaAs quantum dots
M.S. Kuznetsova, R.V. Cherbunin, I.Y. Gerlovin, I.V. Ignatiev, S.Y. Verbin, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B 95 (2017).

Detection and Control of Spin-Orbit Interactions in a GaAs Hole Quantum Point Contact
A. Srinivasan, D.S. Miserev, K.L. Hudson, O. Klochan, K. Muraki, Y. Hirayama, D. Reuter, A.D. Wieck, O.P. Sushkov, A.R. Hamilton, Physical Review Letters 118 (2017).

InAs heteroepitaxy on GaAs patterned by nanosphere lithography
V. Kunnathully, T. Riedl, A. Karlisch, D. Reuter, J. Lindner, in: 2017.

Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography
T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, J. Lindner, in: 2017.

Morphology, structure and enhanced PL of molecular beam epitaxial In0.2G.8As layers on nanopillar patterned GaAs
T. Riedl, V. Kunnathully, A. Karlisch, D. Reuter, N. Weber, C. Meier, R. Schierholz, J. Lindner, (2017).

Phase sensitive properties and coherent manipulation of a photonic crystal microcavity
W. Quiring, B. Jonas, J. Förstner, A.K. Rai, D. Reuter, A.D. Wieck, A. Zrenner, Optics Express 24 (2016) 20672–20684.

Optical Transitions between Confined and Unconfined States in p-Type Asymmetric GaAs/InGaAs/AlGaAs QW Structures
P. Sitarek, K. Ryczko, J. Misiewicz, D. Reuter, A. Wieck, Acta Physica Polonica A 120 (2016) 849–851.

Exciton Exchange between Nearly-Free and Acceptor-Bound States of a Positive Trion Assisted by Cyclotron Excitation
J. Jadczak, L. Bryja, A. Wójs, G. Bartsch, D.R. Yakovlev, M. Bayer, P. Plochocka, M. Potemski, D. Reuter, A. Wieck, Acta Physica Polonica A 119 (2016) 600–601.

A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy
N. Sharma, D. Reuter, Journal of Crystal Growth 477 (2016) 225–229.

Polaron-induced lattice distortion of (In,Ga)As/GaAs quantum dots by optically excited carriers
S. Tiemeyer, M. Bombeck, H. Göhring, M. Paulus, C. Sternemann, J. Nase, F.J. Wirkert, J. Möller, T. Büning, O.H. Seeck, D. Reuter, A.D. Wieck, M. Bayer, M. Tolan, Nanotechnology 27 (2016).