F. Bopp et al., “Coherent driving of direct and indirect excitons in a quantum dot molecule,”10.1103/physrevb.107.165426__Physical Review B, vol. 107, no. 16, Art. no. 165426, 2023, doi:10.1103/physrevb.107.165426 .

M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride on GrapheneCovered 3CSiC Substrates by PlasmaAssisted Molecular Beam Epitaxy,”10.1002/pssb.202300034__physica status solidi (b), vol. 260, no. 7, 2023, doi:10.1002/pssb.202300034 .

S. Feddersen, V. Zolatanosha, A. Alshaikh, D. Reuter, and C. Heyn, “Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets,”10.3390/nano13030466__Nanomaterials, vol. 13, no. 3, Art. no. 466, 2023, doi:10.3390/nano13030466 .

A. Bauer, D. Woitkowski, D. Reuter, and P. Reinhold, “Fachliche und überfachliche Herausforderungen in der Studieneingangsphase Physik,” in Hochschullehre erforschen. , U. Fahr, A. Kenner, H. Angenent, and A. Eßer-Lüghausen, Eds. Wiesbaden: Springer Fachmedien, 2022, pp. 339–362.

T. Riedl, V. S. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. K. N. Lindner, “SizeDependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars,”10.1002/admi.202102159__Advanced Materials Interfaces, Art. no. 2102159, 2022, doi:10.1002/admi.202102159 .

M. Kobecki et al., “Giant Photoelasticity of Polaritons for Detection of Coherent Phonons in a Superlattice with Quantum Sensitivity,”10.1103/physrevlett.128.157401__Physical Review Letters, vol. 128, no. 15, Art. no. 157401, 2022, doi:10.1103/physrevlett.128.157401 .

T. Henksmeier et al., “Remote epitaxy of InxG-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates,”10.1016/j.jcrysgro.2022.126756__Journal of Crystal Growth, vol. 593, Art. no. 126756, 2022, doi:10.1016/j.jcrysgro.2022.126756 .

A. K. Verma, F. Bopp, J. J. Finley, B. Jonas, A. Zrenner, and D. Reuter, “Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy,”10.1016/j.jcrysgro.2022.126715__Journal of Crystal Growth, Art. no. 126715, 2022, doi:10.1016/j.jcrysgro.2022.126715 .

M. Kobecki et al., “Giant Photoelasticity of Polaritons for Detection of Coherent Phonons in a Superlattice with Quantum Sensitivity,”10.1103/physrevlett.128.157401__Physical Review Letters, vol. 128, no. 15, Art. no. 157401, 2022, doi:10.1103/physrevlett.128.157401 .

F. Bopp et al., “Quantum Dot Molecule Devices with Optical Control of Charge Status and Electronic Control of Coupling,”10.1002/qute.202200049__Advanced Quantum Technologies, Art. no. 2200049, 2022, doi:10.1002/qute.202200049 .

F. Meier et al., “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks,”10.1002/pssb.202200508__physica status solidi (b), Art. no. 2200508, 2022, doi:10.1002/pssb.202200508 .

T. Riedl et al., “Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A,”10.1063/5.0121559__Journal of Applied Physics, vol. 132, no. 18, Art. no. 185701, 2022, doi:10.1063/5.0121559 .

T. Riedl, V. Kunnathully, A. Trapp, T. Langer, D. Reuter, and J. Lindner, “SizeDependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars,”10.1002/admi.202102159__Advanced Materials Interfaces, vol. 9, no. 11, Art. no. 2102159, 2022, doi:10.1002/admi.202102159 .

T. Henksmeier et al., “Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates,”10.1016/j.jcrysgro.2022.126756__Journal of Crystal Growth, vol. 593, Art. no. 126756, 2022, doi:10.1016/j.jcrysgro.2022.126756 .

M. Sartison, O.https://doi.org/10.1088/2633-4356/ac6f3e__Camacho Ibarra, K. D. Jöns, I. Caltzidis, and D. Reuter, “Scalable integration of quantum emitters into photonic integrated circuits,”https://doi.org/10.1088/2633-4356/ac6f3e__vol. 2. 2022, doi:https://doi.org/10.1088/2633-4356/ac6f3e .

B. Jonas et al., “Nonlinear down-conversion in a single quantum dot,”10.1038/s41467-022-28993-3__Nature Communications, vol. 13, no. 1, Art. no. 1387, 2022, doi:10.1038/s41467-022-28993-3 .

B. Jonas et al., Nonlinear down-conversion in a single quantum dot. LibreCat University, 2022.

T. Henksmeier, M. Eppinger, B. Reineke, T. Zentgraf, C. Meier, and D. Reuter, “Selective Etching of (111)B-Oriented AlxGxAs-Layers for Epitaxial Lift-Off,” physica status solidi (a), vol. 218, no. 3, p. 2000408, 2021.

F. Meier et al., “Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001),” AIP Advances, 2021.

E. Evers et al., “Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation,” npj Quantum Information, 2021.