Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks
F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (b) (2022).
LibreCat: /record/35232
DOI: 10.1002/pssb.202200508

Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A
T. Riedl, V.S. Kunnathully, A.K. Verma, T. Langer, D. Reuter, B. Büker, A. Hütten, J. Lindner, Journal of Applied Physics 132 (2022).
LibreCat: /record/34056
DOI: 10.1063/5.0121559

SizeDependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars
T. Riedl, V. Kunnathully, A. Trapp, T. Langer, D. Reuter, J. Lindner, Advanced Materials Interfaces 9 (2022).
LibreCat: /record/34053
DOI: 10.1002/admi.202102159

Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates
T. Henksmeier, J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez, M. Voigt, G. Grundmeier, D. Reuter, Journal of Crystal Growth 593 (2022).
LibreCat: /record/36804
DOI: 10.1016/j.jcrysgro.2022.126756

Scalable integration of quantum emitters into photonic integrated circuits
M. Sartison, O.  Camacho Ibarra, K.D. Jöns, I. Caltzidis, D. Reuter, 2 (2022).
LibreCat: /record/41800
DOI: https://doi.org/10.1088/2633-4356/ac6f3e

Nonlinear down-conversion in a single quantum dot
B. Jonas, D.F. Heinze, E. Schöll, P. Kallert, T. Langer, S. Krehs, A. Widhalm, K. Jöns, D. Reuter, S. Schumacher, A. Zrenner, Nature Communications 13 (2022).
LibreCat: /record/40523
DOI: 10.1038/s41467-022-28993-3

Nonlinear down-conversion in a single quantum dot
B. Jonas, D.F. Heinze, E. Schöll, P. Kallert, T. Langer, S. Krehs, A. Widhalm, K. Jöns, D. Reuter, A. Zrenner, Nonlinear Down-Conversion in a Single Quantum Dot, LibreCat University, 2022.
LibreCat: /record/40428
DOI: 10.5281/ZENODO.6024228

Selective Etching of (111)B-Oriented AlxGxAs-Layers for Epitaxial Lift-Off
T. Henksmeier, M. Eppinger, B. Reineke, T. Zentgraf, C. Meier, D. Reuter, Physica Status Solidi (A) 218 (2021) 2000408.
LibreCat: /record/20592
DOI: https://doi.org/10.1002/pssa.202000408

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).
LibreCat: /record/22533
DOI: 10.1063/5.0053865

Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation
E. Evers, N.E. Kopteva, I.A. Yugova, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, Npj Quantum Information (2021).
LibreCat: /record/22003
DOI: 10.1038/s41534-021-00395-1

Bright Electrically Controllable QuantumDotMolecule Devices Fabricated by In Situ ElectronBeam Lithography
J. Schall, M. Deconinck, N. Bart, M. Florian, M. Helversen, C. Dangel, R. Schmidt, L. Bremer, F. Bopp, I. Hüllen, C. Gies, D. Reuter, A.D. Wieck, S. Rodt, J.J. Finley, F. Jahnke, A. Ludwig, S. Reitzenstein, Advanced Quantum Technologies (2021).
LibreCat: /record/22004
DOI: 10.1002/qute.202100002

Optoelectronic sampling of ultrafast electric transients with single quantum dots
A. Widhalm, S. Krehs, D. Siebert, N.L. Sharma, T. Langer, B. Jonas, D. Reuter, A. Thiede, J. Förstner, A. Zrenner, Applied Physics Letters 119 (2021) 181109.
LibreCat: /record/27099
DOI: 10.1063/5.0061358

Bright Electrically Controllable QuantumDotMolecule Devices Fabricated by In Situ ElectronBeam Lithography
J. Schall, M. Deconinck, N. Bart, M. Florian, M. Helversen, C. Dangel, R. Schmidt, L. Bremer, F. Bopp, I. Hüllen, C. Gies, D. Reuter, A.D. Wieck, S. Rodt, J.J. Finley, F. Jahnke, A. Ludwig, S. Reitzenstein, Advanced Quantum Technologies 4 (2021).
LibreCat: /record/46135
DOI: 10.1002/qute.202100002

Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports 11 (2021).
LibreCat: /record/25227
DOI: 10.1038/s41598-021-98569-6

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).
LibreCat: /record/23843
DOI: 10.1063/5.0053865

Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
D.Q. Wang, D. Reuter, A.D. Wieck, A.R. Hamilton, O. Klochan, Applied Physics Letters (2020).
LibreCat: /record/17433
DOI: 10.1063/5.0009462

InAs heteroepitaxy on nanopillar-patterned GaAs (111)A
V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner, Journal of Crystal Growth (2020).
LibreCat: /record/17434
DOI: 10.1016/j.jcrysgro.2020.125597

Electrostatic potential shape of gate-defined quantum point contacts
M. Geier, J. Freudenfeld, J.T. Silva, V. Umansky, D. Reuter, A.D. Wieck, P.W. Brouwer, S. Ludwig, Physical Review B (2020).
LibreCat: /record/17435
DOI: 10.1103/physrevb.101.165429

Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure
M. Javaid Iqbal, D. Reuter, A.D. Wieck, C. van der Wal, The European Physical Journal Applied Physics (2020).
LibreCat: /record/17436
DOI: 10.1051/epjap/2020190202

Electrical detection of excitonic states by time-resolved conductance measurements
C. Ebler, P.A. Labud, A.K. Rai, D. Reuter, A.D. Wieck, A. Ludwig, Physical Review B (2020).
LibreCat: /record/17437
DOI: 10.1103/physrevb.101.125303