Nonlinear down-conversion in a single quantum dot
B. Jonas, D.F. Heinze, E. Schöll, P. Kallert, T. Langer, S. Krehs, A. Widhalm, K. Jöns, D. Reuter, S. Schumacher, A. Zrenner, Nature Communications 13 (2022).
LibreCat: /record/40523
DOI: 10.1038/s41467-022-28993-3

Nonlinear down-conversion in a single quantum dot
B. Jonas, D.F. Heinze, E. Schöll, P. Kallert, T. Langer, S. Krehs, A. Widhalm, K. Jöns, D. Reuter, A. Zrenner, Nonlinear Down-Conversion in a Single Quantum Dot, LibreCat University, 2022.
LibreCat: /record/40428
DOI: 10.5281/ZENODO.6024228

Selective Etching of (111)B-Oriented AlxGxAs-Layers for Epitaxial Lift-Off
T. Henksmeier, M. Eppinger, B. Reineke, T. Zentgraf, C. Meier, D. Reuter, Physica Status Solidi (A) 218 (2021) 2000408.
LibreCat: /record/20592
DOI: https://doi.org/10.1002/pssa.202000408

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).
LibreCat: /record/22533
DOI: 10.1063/5.0053865

Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation
E. Evers, N.E. Kopteva, I.A. Yugova, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, A. Greilich, Npj Quantum Information (2021).
LibreCat: /record/22003
DOI: 10.1038/s41534-021-00395-1

Bright Electrically Controllable QuantumDotMolecule Devices Fabricated by In Situ ElectronBeam Lithography
J. Schall, M. Deconinck, N. Bart, M. Florian, M. Helversen, C. Dangel, R. Schmidt, L. Bremer, F. Bopp, I. Hüllen, C. Gies, D. Reuter, A.D. Wieck, S. Rodt, J.J. Finley, F. Jahnke, A. Ludwig, S. Reitzenstein, Advanced Quantum Technologies (2021).
LibreCat: /record/22004
DOI: 10.1002/qute.202100002

Optoelectronic sampling of ultrafast electric transients with single quantum dots
A. Widhalm, S. Krehs, D. Siebert, N.L. Sharma, T. Langer, B. Jonas, D. Reuter, A. Thiede, J. Förstner, A. Zrenner, Applied Physics Letters 119 (2021) 181109.
LibreCat: /record/27099
DOI: 10.1063/5.0061358

Bright Electrically Controllable QuantumDotMolecule Devices Fabricated by In Situ ElectronBeam Lithography
J. Schall, M. Deconinck, N. Bart, M. Florian, M. Helversen, C. Dangel, R. Schmidt, L. Bremer, F. Bopp, I. Hüllen, C. Gies, D. Reuter, A.D. Wieck, S. Rodt, J.J. Finley, F. Jahnke, A. Ludwig, S. Reitzenstein, Advanced Quantum Technologies 4 (2021).
LibreCat: /record/46135
DOI: 10.1002/qute.202100002

Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports 11 (2021).
LibreCat: /record/25227
DOI: 10.1038/s41598-021-98569-6

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).
LibreCat: /record/23843
DOI: 10.1063/5.0053865

Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
D.Q. Wang, D. Reuter, A.D. Wieck, A.R. Hamilton, O. Klochan, Applied Physics Letters (2020).
LibreCat: /record/17433
DOI: 10.1063/5.0009462

InAs heteroepitaxy on nanopillar-patterned GaAs (111)A
V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner, Journal of Crystal Growth (2020).
LibreCat: /record/17434
DOI: 10.1016/j.jcrysgro.2020.125597

Electrostatic potential shape of gate-defined quantum point contacts
M. Geier, J. Freudenfeld, J.T. Silva, V. Umansky, D. Reuter, A.D. Wieck, P.W. Brouwer, S. Ludwig, Physical Review B (2020).
LibreCat: /record/17435
DOI: 10.1103/physrevb.101.165429

Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure
M. Javaid Iqbal, D. Reuter, A.D. Wieck, C. van der Wal, The European Physical Journal Applied Physics (2020).
LibreCat: /record/17436
DOI: 10.1051/epjap/2020190202

Electrical detection of excitonic states by time-resolved conductance measurements
C. Ebler, P.A. Labud, A.K. Rai, D. Reuter, A.D. Wieck, A. Ludwig, Physical Review B (2020).
LibreCat: /record/17437
DOI: 10.1103/physrevb.101.125303

Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).
LibreCat: /record/23841
DOI: 10.1002/pssb.201900532

Excess noise in      Al x   Ga  1  xAs/GaAs based quantum rings
C. Riha, S.S. Buchholz, O. Chiatti, A.D. Wieck, D. Reuter, S.F. Fischer, Applied Physics Letters (2020).
LibreCat: /record/17995
DOI: 10.1063/5.0002247

Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2020).
LibreCat: /record/21796
DOI: 10.1088/1361-6641/ab89e1

Strain-driven InAs island growth on top of GaAs(111) nanopillars
T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J.K.N. Lindner, Physical Review Materials (2020).
LibreCat: /record/21797
DOI: 10.1103/physrevmaterials.4.014602

Strain-driven InAs island growth on top of GaAs(111) nanopillars
T. Riedl, V.S. Kunnathully, A. Trapp, T. Langer, D. Reuter, J. Lindner, Physical Review Materials 4 (2020).
LibreCat: /record/34093
DOI: 10.1103/physrevmaterials.4.014602