Schmidt, W. G., Bechstedt, F., &; Srivastava, G. P. (1995). III-V(110) surface dynamics from anab initiofrozen-phonon approach. Physical Review B, 52(3), 2001–2007.https://doi.org/10.1103/physrevb.52.2001 
LibreCat: /record/13798
DOI: 10.1103/physrevb.52.2001

Schmidt, W. G., &; Bechstedt, F. (1995). Se/GaAs(110): energetics and structure. Surface Science, 331–333(Part A), 557–563.https://doi.org/10.1016/0039-6028(95)00317-7 
LibreCat: /record/13799
DOI: 10.1016/0039-6028(95)00317-7

Kress, C., Fiedler, M., Schmidt, W. G., &; Bechstedt, F. (1995). Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces. Surface Science, 331–333, 1152–1156.https://doi.org/10.1016/0039-6028(95)00160-3 
LibreCat: /record/13800
DOI: 10.1016/0039-6028(95)00160-3

Schmidt, W. G., &; Srivastava, G. P. (1995). III-V(110)/Sb(1 ML): structural and dynamical properties. Surface Science, 331–333(Part A), 540–545.https://doi.org/10.1016/0039-6028(95)00304-5 
LibreCat: /record/13801
DOI: 10.1016/0039-6028(95)00304-5

Kress, C., Fiedler, M., Schmidt, W. G., &; Bechstedt, F. (1995). Geometrical and electronic structure of the reconstructed diamond (100) surface. Physical Review B, 50(23), 17697–17700.https://doi.org/10.1103/physrevb.50.17697 
LibreCat: /record/13850
DOI: 10.1103/physrevb.50.17697

Schmidt, W. G., &; Bechstedt, F. (1995). Exchange reactions versus adsorption geometries for Se/GaAs(110). Physical Review B, 50(23), 17651–17654.https://doi.org/10.1103/physrevb.50.17651 
LibreCat: /record/13851
DOI: 10.1103/physrevb.50.17651

Schmidt, W. G., &; Bechstedt, F. (1995). Se/GaAs(110): Atomic and electronic structure. Physical Review B, 50(23), 17280–17291.https://doi.org/10.1103/physrevb.50.17280 
LibreCat: /record/13852
DOI: 10.1103/physrevb.50.17280

Bechstedt, F., Schmidt, W. G., &; Wenzien, B. (1994). Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations. Europhysics Letters (EPL), 25(5), 357–362.https://doi.org/10.1209/0295-5075/25/5/008 
LibreCat: /record/13853
DOI: 10.1209/0295-5075/25/5/008

Schmidt, W. G., &; Srivastava, G. (1994). First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). Solid State Communications, 89(4), 345–348.https://doi.org/10.1016/0038-1098(94)90597-5 
LibreCat: /record/13854
DOI: 10.1016/0038-1098(94)90597-5

Schmidt, W. G., Wenzien, B., &; Bechstedt, F. (1994). Coverage-dependent bonding of Sb on GaAs (110). Surface Science, 307–309(Part A), 235–240.https://doi.org/10.1016/0039-6028(94)90400-6 
LibreCat: /record/13855
DOI: 10.1016/0039-6028(94)90400-6

Schmidt, W. G., Wenzien, B., &; Bechstedt, F. (1994). Chemisorption of antimony on GaAs(110). Physical Review B, 49(7), 4731–4744.https://doi.org/10.1103/physrevb.49.4731 
LibreCat: /record/13856
DOI: 10.1103/physrevb.49.4731

Schmidt, W. G., &; Srivastava, G. P. (1993). Chemisorption of aluminium on GaAs(110). Journal of Physics: Condensed Matter, 5(49), 9025–9036.https://doi.org/10.1088/0953-8984/5/49/005 
LibreCat: /record/13857
DOI: 10.1088/0953-8984/5/49/005

Schmidt, W. G., Wenzien, B., &; Bechstedt, F. (1993). AB initio calculation of the atomic and electronic structure for Sb adsorbed on GaAs(110). Czechoslovak Journal of Physics, 43(9–10), 1003–1007.https://doi.org/10.1007/bf01595293 
LibreCat: /record/13858
DOI: 10.1007/bf01595293