N. Esser et al., “GaP(001) and InP(001): Reflectance anisotropy and surface geometry,” Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures, vol. 17, no. 4, 1999.

A. M. Frisch, W. G. Schmidt, J. Bernholc, M. Pristovsek, N. Esser, and W. Richter, “(2×4)GaP(001) surface: Atomic structure and optical anisotropy,” Physical Review B, vol. 60, no. 4, pp. 2488–2494, 1999.

W. G. Schmidt, E. L. Briggs, J. Bernholc, and F. Bechstedt, “Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces,” Physical Review B, vol. 59, no. 3, pp. 2234–2239, 1999.

A. I. Shkrebtii et al., “Reflectance Anisotropy of GaAs(100): Theory and Experiment,” Physical Review Letters, vol. 81, no. 3, pp. 721–724, 1998.

W. G. Schmidt and F. Bechstedt, “Geometry and electronic structure of InP(001)(2×4) reconstructions,” Surface Science, vol. 409, no. 3, pp. 474–484, 1998.

W. G. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, C. Schultz, and W. Richter, “Atomic structure of InP(001)-(2×4): A dimer reconstruction,” Physical Review B, vol. 57, no. 23, pp. 14596–14599, 1998.

W. G. Schmidt, P. Käckell, and F. Bechstedt, “In-induced (4 × 2) reconstructions of GaAs(001) surfaces,” Applied Surface Science, vol. 123–124, pp. 136–140, 1998.

R. W. N. Nilen et al., “A High Resolution Investigation of the Anisotropic Electron-Positron Momentum Distribution in Diamond,” Materials Science Forum, vol. 255–257, pp. 475–478, 1997.

W. G. Schmidt, “(4×2) and (2×4) reconstructions of GaAs and InP(001) surfaces,” Applied Physics A: Materials Science &; Processing, vol. 65, pp. 581–586, 1997.

R. W. N. Nilen et al., “The anisotropic electron - positron momentum distribution in diamond,” Journal of Physics: Condensed Matter, vol. 9, pp. 6323–6333, 1997.

U. Grossner, W. G. Schmidt, and F. Bechstedt, “As on InP(110) studied within density-functional theory,” Physical Review B, vol. 56, no. 11, pp. 6719–6726, 1997.

U. Großner, W. G. Schmidt, F. Bechstedt, P. V. Santos, B. Koopmans, and N. Esser, “Chemisorption of arsenic on InP(110),” Surface Science, vol. 377–379, pp. 619–622, 1997.

W. G. Schmidt and F. Bechstedt, “Comparison of As-rich and Sb-terminated GaAs(100)(2 × 4) reconstructions,” Surface Science, vol. 377–379, pp. 11–14, 1997.

W. G. Schmidt and F. Bechstedt, “Antimony-stabilized GaAs(001)(2×4) reconstructions,” Physical Review B, vol. 55, no. 19, pp. 13051–13057, 1997.

R. W. N. Nilen et al., “Electron-positron momentum density distribution in diamond,” Applied Surface Science, vol. 116, pp. 330–334, 1997.

N. Esser et al., “Atomic Structure of the Sb-Stabilized GaAs(100)-(2×4) Surface,” Physical Review Letters, vol. 77, no. 21, pp. 4402–4405, 1996.

W. G. Schmidt and F. Bechstedt, “Geometry and electronic structure of GaAs(001)(2×4) reconstructions,” Physical Review B, vol. 54, no. 23, pp. 16742–16748, 1996.

P. V. Santos, B. Koopmans, N. Esser, W. G. Schmidt, and F. Bechstedt, “Optical Properties of Ordered As Layers on InP(110) Surfaces,” Physical Review Letters, vol. 77, no. 4, pp. 759–762, 1996.

W. G. Schmidt and F. Bechstedt, “Atomic structures of GaAs(100)-(2 × 4) reconstructions,” Surface Science, vol. 360, no. 1, pp. L473–L477, 1996.

F. Bechstedt, W. G. Schmidt, and A. Scholze, “Adatoms and vacancies on the diamond(111) surface,” Europhysics Letters (EPL), vol. 35, no. 8, pp. 585–590, 1996.