Schmidt WG, Verwoerd W. Annihilation of delocalized positrons: a comparison of diamond and silicon. Physics Letters A. 1996;222(4):275-280. doi:10.1016/0375-9601(96)00653-6

Scholze A, Schmidt WG, Bechstedt F. Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face. Physical Review B. 1996;53(20):13725-13733. doi:10.1103/physrevb.53.13725

Schmidt WG, Käckell P, Bechstedt F. 3d core-level shifts at. Surface Science. 1996;357-358:545-549. doi:10.1016/0039-6028(96)00220-8

Scholze A, Schmidt WG, Bechstedt F. Diamond (111) and (100) surface reconstructions. Thin Solid Films. 1996;281-282:256-259. doi:10.1016/0040-6090(96)08646-4

Schmidt WG, Bechstedt F, Srivastava GP. Phonons at III–V (110) surfaces. Surface Science. 1996;352-354:83-88. doi:10.1016/0039-6028(95)01095-5

Schmidt WG, Scholze A, Bechstedt F. Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface? Surface Science. 1996;351:183-188. doi:10.1016/0039-6028(95)01270-2

Käckell P, Schmidt WG, Bechstedt F. Se-induced 3d core-level shifts of GaAs(110). Applied Surface Science. 1996;104-105:141-146. doi:10.1016/s0169-4332(96)00135-3

Scholze A, Schmidt WG, Käckell P, Bechstedt F. Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure. Materials Science and Engineering: B. 1996;37(1-3):158-161. doi:10.1016/0921-5107(95)01477-2

Santos PV, Esser N, Groenen J, Cardona M, Schmidt WG, Bechstedt F. Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces. Physical Review B. 1995;52(24):17379-17385. doi:10.1103/physrevb.52.17379

Santos PV, Esser N, Cardona M, Schmidt WG, Bechstedt F. Optical properties of Sb-terminated GaAs and InP (110) surfaces. Physical Review B. 1995;52(16):12158-12167. doi:10.1103/physrevb.52.12158

Schmidt WG, Bechstedt F, Srivastava GP. III-V(110) surface dynamics from anab initiofrozen-phonon approach. Physical Review B. 1995;52(3):2001-2007. doi:10.1103/physrevb.52.2001

Schmidt WG, Bechstedt F. Se/GaAs(110): energetics and structure. Surface Science. 1995;331-333(Part A):557-563. doi:10.1016/0039-6028(95)00317-7

Kress C, Fiedler M, Schmidt WG, Bechstedt F. Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces. Surface Science. 1995;331-333:1152-1156. doi:10.1016/0039-6028(95)00160-3

Schmidt WG, Srivastava GP. III-V(110)/Sb(1 ML): structural and dynamical properties. Surface Science. 1995;331-333(Part A):540-545. doi:10.1016/0039-6028(95)00304-5

Kress C, Fiedler M, Schmidt WG, Bechstedt F. Geometrical and electronic structure of the reconstructed diamond (100) surface. Physical Review B. 1995;50(23):17697-17700. doi:10.1103/physrevb.50.17697

Schmidt WG, Bechstedt F. Exchange reactions versus adsorption geometries for Se/GaAs(110). Physical Review B. 1995;50(23):17651-17654. doi:10.1103/physrevb.50.17651

Schmidt WG, Bechstedt F. Se/GaAs(110): Atomic and electronic structure. Physical Review B. 1995;50(23):17280-17291. doi:10.1103/physrevb.50.17280

Bechstedt F, Schmidt WG, Wenzien B. Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations. Europhysics Letters (EPL). 1994;25(5):357-362. doi:10.1209/0295-5075/25/5/008

Schmidt WG, Srivastava G. First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). Solid State Communications. 1994;89(4):345-348. doi:10.1016/0038-1098(94)90597-5

Schmidt WG, Wenzien B, Bechstedt F. Coverage-dependent bonding of Sb on GaAs (110). Surface Science. 1994;307-309(Part A):235-240. doi:10.1016/0039-6028(94)90400-6