Schmidt, W. G., &; Verwoerd, W. . (1996). Annihilation of delocalized positrons: a comparison of diamond and silicon. Physics Letters A, 222(4), 275–280.https://doi.org/10.1016/0375-9601(96)00653-6 

Scholze, A., Schmidt, W. G., &; Bechstedt, F. (1996). Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face. Physical Review B, 53(20), 13725–13733.https://doi.org/10.1103/physrevb.53.13725 

Schmidt, W. G., Käckell, P., &; Bechstedt, F. (1996). 3d core-level shifts at. Surface Science, 357–358, 545–549.https://doi.org/10.1016/0039-6028(96)00220-8 

Scholze, A., Schmidt, W. G., &; Bechstedt, F. (1996). Diamond (111) and (100) surface reconstructions. Thin Solid Films, 281–282, 256–259.https://doi.org/10.1016/0040-6090(96)08646-4 

Schmidt, W. G., Bechstedt, F., &; Srivastava, G. P. (1996). Phonons at III–V (110) surfaces. Surface Science, 352–354, 83–88.https://doi.org/10.1016/0039-6028(95)01095-5 

Schmidt, W. G., Scholze, A., &; Bechstedt, F. (1996). Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface? Surface Science, 351, 183–188.https://doi.org/10.1016/0039-6028(95)01270-2 

Käckell, P., Schmidt, W. G., &; Bechstedt, F. (1996). Se-induced 3d core-level shifts of GaAs(110). Applied Surface Science, 104–105, 141–146.https://doi.org/10.1016/s0169-4332(96)00135-3 

Scholze, A., Schmidt, W. G., Käckell, P., &; Bechstedt, F. (1996). Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure. Materials Science and Engineering: B, 37(1–3), 158–161.https://doi.org/10.1016/0921-5107(95)01477-2 

Santos, P. V., Esser, N., Groenen, J., Cardona, M., Schmidt, W. G., &; Bechstedt, F. (1995). Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces. Physical Review B, 52(24), 17379–17385.https://doi.org/10.1103/physrevb.52.17379 

Santos, P. V., Esser, N., Cardona, M., Schmidt, W. G., &; Bechstedt, F. (1995). Optical properties of Sb-terminated GaAs and InP (110) surfaces. Physical Review B, 52(16), 12158–12167.https://doi.org/10.1103/physrevb.52.12158 

Schmidt, W. G., Bechstedt, F., &; Srivastava, G. P. (1995). III-V(110) surface dynamics from anab initiofrozen-phonon approach. Physical Review B, 52(3), 2001–2007.https://doi.org/10.1103/physrevb.52.2001 

Schmidt, W. G., &; Bechstedt, F. (1995). Se/GaAs(110): energetics and structure. Surface Science, 331–333(Part A), 557–563.https://doi.org/10.1016/0039-6028(95)00317-7 

Kress, C., Fiedler, M., Schmidt, W. G., &; Bechstedt, F. (1995). Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces. Surface Science, 331–333, 1152–1156.https://doi.org/10.1016/0039-6028(95)00160-3 

Schmidt, W. G., &; Srivastava, G. P. (1995). III-V(110)/Sb(1 ML): structural and dynamical properties. Surface Science, 331–333(Part A), 540–545.https://doi.org/10.1016/0039-6028(95)00304-5 

Kress, C., Fiedler, M., Schmidt, W. G., &; Bechstedt, F. (1995). Geometrical and electronic structure of the reconstructed diamond (100) surface. Physical Review B, 50(23), 17697–17700.https://doi.org/10.1103/physrevb.50.17697 

Schmidt, W. G., &; Bechstedt, F. (1995). Exchange reactions versus adsorption geometries for Se/GaAs(110). Physical Review B, 50(23), 17651–17654.https://doi.org/10.1103/physrevb.50.17651 

Schmidt, W. G., &; Bechstedt, F. (1995). Se/GaAs(110): Atomic and electronic structure. Physical Review B, 50(23), 17280–17291.https://doi.org/10.1103/physrevb.50.17280 

Bechstedt, F., Schmidt, W. G., &; Wenzien, B. (1994). Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations. Europhysics Letters (EPL), 25(5), 357–362.https://doi.org/10.1209/0295-5075/25/5/008 

Schmidt, W. G., &; Srivastava, G. (1994). First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). Solid State Communications, 89(4), 345–348.https://doi.org/10.1016/0038-1098(94)90597-5 

Schmidt, W. G., Wenzien, B., &; Bechstedt, F. (1994). Coverage-dependent bonding of Sb on GaAs (110). Surface Science, 307–309(Part A), 235–240.https://doi.org/10.1016/0039-6028(94)90400-6