Annihilation of delocalized positrons: a comparison of diamond and silicon
W.G. Schmidt, W.. Verwoerd, Physics Letters A 222 (1996) 275–280.
LibreCat: /record/13788
DOI: 10.1016/0375-9601(96)00653-6

Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face
A. Scholze, W.G. Schmidt, F. Bechstedt, Physical Review B 53 (1996) 13725–13733.
LibreCat: /record/13789
DOI: 10.1103/physrevb.53.13725

3d core-level shifts at
W.G. Schmidt, P. Käckell, F. Bechstedt, Surface Science 357–358 (1996) 545–549.
LibreCat: /record/13790
DOI: 10.1016/0039-6028(96)00220-8

Diamond (111) and (100) surface reconstructions
A. Scholze, W.G. Schmidt, F. Bechstedt, Thin Solid Films 281–282 (1996) 256–259.
LibreCat: /record/13791
DOI: 10.1016/0040-6090(96)08646-4

Phonons at III–V (110) surfaces
W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Surface Science 352–354 (1996) 83–88.
LibreCat: /record/13792
DOI: 10.1016/0039-6028(95)01095-5

Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface?
W.G. Schmidt, A. Scholze, F. Bechstedt, Surface Science 351 (1996) 183–188.
LibreCat: /record/13793
DOI: 10.1016/0039-6028(95)01270-2

Se-induced 3d core-level shifts of GaAs(110)
P. Käckell, W.G. Schmidt, F. Bechstedt, Applied Surface Science 104–105 (1996) 141–146.
LibreCat: /record/13794
DOI: 10.1016/s0169-4332(96)00135-3

Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure
A. Scholze, W.G. Schmidt, P. Käckell, F. Bechstedt, Materials Science and Engineering: B 37 (1996) 158–161.
LibreCat: /record/13795
DOI: 10.1016/0921-5107(95)01477-2

Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, J. Groenen, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 17379–17385.
LibreCat: /record/13796
DOI: 10.1103/physrevb.52.17379

Optical properties of Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 12158–12167.
LibreCat: /record/13797
DOI: 10.1103/physrevb.52.12158

III-V(110) surface dynamics from anab initiofrozen-phonon approach
W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Physical Review B 52 (1995) 2001–2007.
LibreCat: /record/13798
DOI: 10.1103/physrevb.52.2001

Se/GaAs(110): energetics and structure
W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 557–563.
LibreCat: /record/13799
DOI: 10.1016/0039-6028(95)00317-7

Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces
C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 1152–1156.
LibreCat: /record/13800
DOI: 10.1016/0039-6028(95)00160-3

III-V(110)/Sb(1 ML): structural and dynamical properties
W.G. Schmidt, G.P. Srivastava, Surface Science 331–333 (1995) 540–545.
LibreCat: /record/13801
DOI: 10.1016/0039-6028(95)00304-5

Geometrical and electronic structure of the reconstructed diamond (100) surface
C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17697–17700.
LibreCat: /record/13850
DOI: 10.1103/physrevb.50.17697

Exchange reactions versus adsorption geometries for Se/GaAs(110)
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17651–17654.
LibreCat: /record/13851
DOI: 10.1103/physrevb.50.17651

Se/GaAs(110): Atomic and electronic structure
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17280–17291.
LibreCat: /record/13852
DOI: 10.1103/physrevb.50.17280

Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations
F. Bechstedt, W.G. Schmidt, B. Wenzien, Europhysics Letters (EPL) 25 (1994) 357–362.
LibreCat: /record/13853
DOI: 10.1209/0295-5075/25/5/008

First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)
W.G. Schmidt, G. Srivastava, Solid State Communications 89 (1994) 345–348.
LibreCat: /record/13854
DOI: 10.1016/0038-1098(94)90597-5

Coverage-dependent bonding of Sb on GaAs (110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Surface Science 307–309 (1994) 235–240.
LibreCat: /record/13855
DOI: 10.1016/0039-6028(94)90400-6