Remote Epitaxy of Cubic Gallium Nitride on GrapheneCovered 3CSiC Substrates by PlasmaAssisted Molecular Beam Epitaxy
M. Littmann, D. Reuter, D.J. As, Physica Status Solidi (b) 260 (2023).
LibreCat: /record/46132
DOI: 10.1002/pssb.202300034

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N
M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. Becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D.M. Hofmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee, J. Schörmann, ACS Applied Materials &;amp; Interfaces 15 (2023) 39513–39522.
LibreCat: /record/46741
DOI: 10.1021/acsami.3c06319

Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function
E. Baron, R. Goldhahn, S. Espinoza, M. Zahradník, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg, Journal of Applied Physics 134 (2023).
LibreCat: /record/46573
DOI: 10.1063/5.0153091

Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks
F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (b) (2022).
LibreCat: /record/35232
DOI: 10.1002/pssb.202200508

Optical evidence of many-body effects in the zincblende Al$_\'6dathrmx$Ga$_\'6dathrm1-x$N alloy system
E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, D.J. As, Journal of Physics D: Applied Physics (2021).
LibreCat: /record/23842
DOI: 10.1088/1361-6463/abb97a