Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
M. Hajlaoui, S. Ponzoni, M. Deppe, T. Henksmeier, D.J. As, D. Reuter, T. Zentgraf, G. Springholz, C.M. Schneider, S. Cramm, M. Cinchetti, Scientific Reports 11 (2021).
LibreCat: /record/25227
DOI: 10.1038/s41598-021-98569-6

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, D.J. As, AIP Advances (2021).
LibreCat: /record/23843
DOI: 10.1063/5.0053865

A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1xN/AlN/GaN MOS-HEMTs
A. Beloufa, D. Bouguenna, N. Kermas, D.J. As, Journal of Electronic Materials (2020) 2008–2017.
LibreCat: /record/23838
DOI: 10.1007/s11664-019-07927-8

Photoluminescence LineShape Analysis of Highly nType Doped Zincblende GaN
E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physica Status Solidi (B) (2020).
LibreCat: /record/23840
DOI: 10.1002/pssb.201900522

Molecular Beam Epitaxy Growth and Characterization of GermaniumDoped Cubic Al                          x                        Ga            1                          x                        N
M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).
LibreCat: /record/23841
DOI: 10.1002/pssb.201900532