GaP(001) and InP(001): Reflectance anisotropy and surface geometry
N. Esser, W.G. Schmidt, J. Bernholc, A.M. Frisch, P. Vogt, M. Zorn, M. Pristovsek, W. Richter, F. Bechstedt, T. Hannappel, S. Visbeck, Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures 17 (1999).

(2×4)GaP(001) surface: Atomic structure and optical anisotropy
A.M. Frisch, W.G. Schmidt, J. Bernholc, M. Pristovsek, N. Esser, W. Richter, Physical Review B 60 (1999) 2488–2494.

Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces
W.G. Schmidt, E.L. Briggs, J. Bernholc, F. Bechstedt, Physical Review B 59 (1999) 2234–2239.

Reflectance Anisotropy of GaAs(100): Theory and Experiment
A.I. Shkrebtii, N. Esser, W. Richter, W.G. Schmidt, F. Bechstedt, B.O. Fimland, A. Kley, R. Del Sole, Physical Review Letters 81 (1998) 721–724.

Geometry and electronic structure of InP(001)(2×4) reconstructions
W.G. Schmidt, F. Bechstedt, Surface Science 409 (1998) 474–484.

Atomic structure of InP(001)-(2×4): A dimer reconstruction
W.G. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, C. Schultz, W. Richter, Physical Review B 57 (1998) 14596–14599.

In-induced (4 × 2) reconstructions of GaAs(001) surfaces
W.G. Schmidt, P. Käckell, F. Bechstedt, Applied Surface Science 123–124 (1998) 136–140.

A High Resolution Investigation of the Anisotropic Electron-Positron Momentum Distribution in Diamond
R.W.N. Nilen, S.H. Connell, D.T. Britton, C.G. Fischer, E.J. Sendezera, W.G. Schmidt, J.P.F. Sellschop, W.S. Verwoerd, Materials Science Forum 255–257 (1997) 475–478.

(4×2) and (2×4) reconstructions of GaAs and InP(001) surfaces
W.G. Schmidt, Applied Physics A: Materials Science &; Processing 65 (1997) 581–586.

The anisotropic electron - positron momentum distribution in diamond
R.W.N. Nilen, S.H. Connell, D.T. Britton, C.G. Fischer, E.J. Sendezera, P. Schaaff, W.G. Schmidt, J.P.F. Sellschop, W.S. Verwoerd, Journal of Physics: Condensed Matter 9 (1997) 6323–6333.

As on InP(110) studied within density-functional theory
U. Grossner, W.G. Schmidt, F. Bechstedt, Physical Review B 56 (1997) 6719–6726.

Chemisorption of arsenic on InP(110)
U. Großner, W.G. Schmidt, F. Bechstedt, P.V. Santos, B. Koopmans, N. Esser, Surface Science 377–379 (1997) 619–622.

Comparison of As-rich and Sb-terminated GaAs(100)(2 × 4) reconstructions
W.G. Schmidt, F. Bechstedt, Surface Science 377–379 (1997) 11–14.

Antimony-stabilized GaAs(001)(2×4) reconstructions
W.G. Schmidt, F. Bechstedt, Physical Review B 55 (1997) 13051–13057.

Electron-positron momentum density distribution in diamond
R.W.N. Nilen, S.H. Connell, W.G. Schmidt, D.T. Britton, W.S. Verwoerd, J.P.F. Sellschop, S. Shrivastava, Applied Surface Science 116 (1997) 330–334.

Atomic Structure of the Sb-Stabilized GaAs(100)-(2×4) Surface
N. Esser, A.I. Shkrebtii, U. Resch-Esser, C. Springer, W. Richter, W.G. Schmidt, F. Bechstedt, R. Del Sole, Physical Review Letters 77 (1996) 4402–4405.

Geometry and electronic structure of GaAs(001)(2×4) reconstructions
W.G. Schmidt, F. Bechstedt, Physical Review B 54 (1996) 16742–16748.

Optical Properties of Ordered As Layers on InP(110) Surfaces
P.V. Santos, B. Koopmans, N. Esser, W.G. Schmidt, F. Bechstedt, Physical Review Letters 77 (1996) 759–762.

Atomic structures of GaAs(100)-(2 × 4) reconstructions
W.G. Schmidt, F. Bechstedt, Surface Science 360 (1996) L473–L477.

Adatoms and vacancies on the diamond(111) surface
F. Bechstedt, W.G. Schmidt, A. Scholze, Europhysics Letters (EPL) 35 (1996) 585–590.

Annihilation of delocalized positrons: a comparison of diamond and silicon
W.G. Schmidt, W.. Verwoerd, Physics Letters A 222 (1996) 275–280.

Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face
A. Scholze, W.G. Schmidt, F. Bechstedt, Physical Review B 53 (1996) 13725–13733.

3d core-level shifts at
W.G. Schmidt, P. Käckell, F. Bechstedt, Surface Science 357–358 (1996) 545–549.

Diamond (111) and (100) surface reconstructions
A. Scholze, W.G. Schmidt, F. Bechstedt, Thin Solid Films 281–282 (1996) 256–259.

Phonons at III–V (110) surfaces
W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Surface Science 352–354 (1996) 83–88.

Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface?
W.G. Schmidt, A. Scholze, F. Bechstedt, Surface Science 351 (1996) 183–188.

Se-induced 3d core-level shifts of GaAs(110)
P. Käckell, W.G. Schmidt, F. Bechstedt, Applied Surface Science 104–105 (1996) 141–146.

Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure
A. Scholze, W.G. Schmidt, P. Käckell, F. Bechstedt, Materials Science and Engineering: B 37 (1996) 158–161.

Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, J. Groenen, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 17379–17385.

Optical properties of Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 12158–12167.

III-V(110) surface dynamics from anab initiofrozen-phonon approach
W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Physical Review B 52 (1995) 2001–2007.

Se/GaAs(110): energetics and structure
W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 557–563.

Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces
C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 1152–1156.

III-V(110)/Sb(1 ML): structural and dynamical properties
W.G. Schmidt, G.P. Srivastava, Surface Science 331–333 (1995) 540–545.

Geometrical and electronic structure of the reconstructed diamond (100) surface
C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17697–17700.

Exchange reactions versus adsorption geometries for Se/GaAs(110)
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17651–17654.

Se/GaAs(110): Atomic and electronic structure
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17280–17291.

Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations
F. Bechstedt, W.G. Schmidt, B. Wenzien, Europhysics Letters (EPL) 25 (1994) 357–362.

First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)
W.G. Schmidt, G. Srivastava, Solid State Communications 89 (1994) 345–348.

Coverage-dependent bonding of Sb on GaAs (110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Surface Science 307–309 (1994) 235–240.

Chemisorption of antimony on GaAs(110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Physical Review B 49 (1994) 4731–4744.

Chemisorption of aluminium on GaAs(110)
W.G. Schmidt, G.P. Srivastava, Journal of Physics: Condensed Matter 5 (1993) 9025–9036.

AB initio calculation of the atomic and electronic structure for Sb adsorbed on GaAs(110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Czechoslovak Journal of Physics 43 (1993) 1003–1007.