Characterization of unintentional doping in nonpolar GaN
T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of Applied Physics 107 (2010).

Defects in carbon implanted silicon calculated by classical potentials and first-principles methods
F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).

Advanced topics and applications of Transmission Electron Microscopy, Part I-II
J. Lindner, in: 2010.

Ion Beams and Nano-Engineering
D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering, MRS Symposium Proceedings , 2010.

Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers
M. Häberlen, D. Zhu, C. McAleese, M.J. Kappers, C.J. Humphreys, Journal of Physics: Conference Series 209 (2010).

Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer
M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M.J. Kappers, C.J. Humphreys, Physica Status Solidi (B) 247 (2010) 1753–1756.

Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth
M. Häberlen, T.J. Badcock, M.A. Moram, J.L. Hollander, M.J. Kappers, P. Dawson, C.J. Humphreys, R.A. Oliver, Journal of Applied Physics 108 (2010).

The effects of annealing on non-polar (112¯0) a-plane GaN films
R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543.

Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC
A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Materials Science Forum 645–648 (2010) 403–406.

Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*
H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, K.-P. Hüsch, Chemie Ingenieur Technik 82 (2010) 251–258.