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Kurtze, H., et al. “Hyperfine Interaction Mediated Exciton Spin Relaxation in (In,Ga)As Quantum Dots.”10.1103/physrevb.85.195303__Physical Review B, vol. 85, no. 19, American Physical Society (APS), 2012, doi:10.1103/physrevb.85.195303.
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Schuster, J., et al. “Photoluminescence Lineshape Features of Carbon ;4-Doped GaAs Heterostructures.”10.1088/0953-8984/24/16/165801__Journal of Physics: Condensed Matter, vol. 24, no. 16, 165801, IOP Publishing, 2012, doi:10.1088/0953-8984/24/16/165801.
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Bryja, L., et al. “Cyclotron-Resonant Exciton Transfer between the Nearly Free and Strongly Localized Radiative States of a Two-Dimensional Hole Gas in a High Magnetic Field.”10.1103/physrevb.85.165308__Physical Review B, vol. 85, no. 16, American Physical Society (APS), 2012, doi:10.1103/physrevb.85.165308.
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Huang, J., et al. “Electron-Nuclei Spin Coupling in GaAs—Free versus Localized Electrons.”10.1063/1.3699261__Applied Physics Letters, vol. 100, no. 13, 132103, AIP Publishing, 2012, doi:10.1063/1.3699261.
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Houel, J., et al. “Probing Single-Charge Fluctuations at AGaAs/AlAsInterface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot.”10.1103/physrevlett.108.107401__Physical Review Letters, vol. 108, no. 10, American Physical Society (APS), 2012, doi:10.1103/physrevlett.108.107401.
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Chen, J. C. H., et al. “Fabrication and Characterization of Ambipolar Devices on an Undoped AlGaAs/GaAs Heterostructure.”10.1063/1.3673837__Applied Physics Letters, vol. 100, no. 5, 052101, AIP Publishing, 2012, doi:10.1063/1.3673837.
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Höpfner, Henning, et al. “Room Temperature Spin Relaxation in Quantum Dot Based Spin-Optoelectronic Devices.”10.1117/12.907821__Ultrafast Phenomena and Nanophotonics XVI, SPIE, 2012, doi:10.1117/12.907821.
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Li, Yan, et al. “Intrinsic Spin Fluctuations Reveal the Dynamical Response Function of Holes Coupled to Nuclear Spin Baths in (In,Ga)As Quantum Dots.”10.1103/physrevlett.108.186603__Physical Review Letters, vol. 108, no. 18, American Physical Society (APS), 2012, doi:10.1103/physrevlett.108.186603.
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Ruth, Marcel, and Cedrik Meier. “Scaling Coefficient for Three-Dimensional Grain Coalescence of ZnO on Si(111).”10.1103/physrevb.86.224108__Physical Review B, vol. 86, no. 22, American Physical Society (APS), 2012, doi:10.1103/physrevb.86.224108.
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Kröger, Philipp, et al. “Carrier Localization in ZnO Quantum Wires.”10.1063/1.4731767__Applied Physics Letters, vol. 100, no. 26, 263114, AIP Publishing, 2012, doi:10.1063/1.4731767.
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Kemper, R. M., et al. “Growth of Cubic GaN on 3C–SiC/Si (001) Nanostructures.”10.1016/j.jcrysgro.2012.10.011__Journal of Crystal Growth, vol. 378, Elsevier BV, 2012, pp. 291–94, doi:10.1016/j.jcrysgro.2012.10.011.
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Kemper, R. M., et al. TEM Investigation of GaN Thin Films Grown on Nanostructured 3C-SiC/Si(001) Substrates. 2012.
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Lindner, Jörg. Nanosphere Lithography: State-of-the-Art and Future Directions. 2012.
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Pauly, Johannes, and Jörg Lindner. TEM Characterization of Nickel Nanodot Arrays on Silicon Formed by Nanosphere Lithography. 2012.
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