Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of unintentional doping in nonpolar GaN. Journal of Applied Physics. 2010;107(2). doi:10.1063/1.3284944
LibreCat: /record/4202
DOI: 10.1063/1.3284944

Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. Physical Review B. 2010;82(9). doi:10.1103/physrevb.82.094110
LibreCat: /record/4204
DOI: 10.1103/physrevb.82.094110

Lindner J. Advanced topics and applications of Transmission Electron Microscopy, Part I-II. In: ; 2010.
LibreCat: /record/4206

Ila D, Kishimoto N, Lindner J, Baglin J, eds. Ion Beams and Nano-Engineering. Vol 1181. MRS Symposium Proceedings ; 2010.
LibreCat: /record/4207

Häberlen M, Zhu D, McAleese C, Kappers MJ, Humphreys CJ. Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. Journal of Physics: Conference Series. 2010;209. doi:10.1088/1742-6596/209/1/012017
LibreCat: /record/4208
DOI: 10.1088/1742-6596/209/1/012017

Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ. Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. physica status solidi (b). 2010;247(7):1753-1756. doi:10.1002/pssb.200983537
LibreCat: /record/4210
DOI: 10.1002/pssb.200983537

Häberlen M, Badcock TJ, Moram MA, et al. Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of Applied Physics. 2010;108(3). doi:10.1063/1.3460641
LibreCat: /record/4212
DOI: 10.1063/1.3460641

Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0) a-plane GaN films. Journal of Crystal Growth. 2010;312(23):3536-3543. doi:10.1016/j.jcrysgro.2010.08.041
LibreCat: /record/4214
DOI: 10.1016/j.jcrysgro.2010.08.041

Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. Materials Science Forum. 2010;645-648:403-406. doi:10.4028/www.scientific.net/msf.645-648.403
LibreCat: /record/4216
DOI: 10.4028/www.scientific.net/msf.645-648.403

Warnecke H-J, Bothe D, Zrenner A, Berth G, Hüsch K-P. Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*. Chemie Ingenieur Technik. 2010;82(3):251-258. doi:10.1002/cite.200900169
LibreCat: /record/6619
DOI: 10.1002/cite.200900169

Schumacher S, Galbraith I, Ruseckas A, Turnbull GA, Samuel IDW. Dynamics of photoexcitation and stimulated optical emission in conjugated polymers: A multiscale quantum-chemistry and Maxwell-Bloch-equations approach. Physical Review B. 2010. doi:10.1103/physrevb.81.245407
LibreCat: /record/15846
DOI: 10.1103/physrevb.81.245407

Thierfelder C, Sanna S, Schindlmayr A, Schmidt WG. Do we know the band gap of lithium niobate? Physica Status Solidi C. 2010;7(2):362-365. doi:10.1002/pssc.200982473
LibreCat: /record/13573
DOI: 10.1002/pssc.200982473
WoS: 000284313000057

Gerstmann U, Rohrmüller M, Mauri F, Schmidt WG. Ab initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces. physica status solidi (c). 2010;7(2):157-160. doi:10.1002/pssc.200982462
LibreCat: /record/13574
DOI: 10.1002/pssc.200982462

Wippermann S, Schmidt WG, Bechstedt F, et al. Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles. physica status solidi (c). 2010;7(2):133-136. doi:10.1002/pssc.200982413
LibreCat: /record/13581
DOI: 10.1002/pssc.200982413

Bihler C, Gerstmann U, Hoeb M, et al. Manganese-hydrogen complexes inGxMnxN. Physical Review B. 2010;80(20). doi:10.1103/physrevb.80.205205
LibreCat: /record/13656
DOI: 10.1103/physrevb.80.205205

Blankenburg S, Rauls E, Schmidt WG. Catalytic Action of a Cu(111) Surface on Tetraazaperopyrene Polymerization. The Journal of Physical Chemistry Letters. 2010;1:3266-3270. doi:10.1021/jz101389u
LibreCat: /record/13826
DOI: 10.1021/jz101389u

Wippermann S, Schmidt WG. Entropy Explains Metal-Insulator Transition of the Si(111)-In Nanowire Array. Physical Review Letters. 2010;105(12). doi:10.1103/physrevlett.105.126102
LibreCat: /record/13827
DOI: 10.1103/physrevlett.105.126102

Zirkelbach F, Stritzker B, Nordlund K, Lindner JKN, Schmidt WG, Rauls E. Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. Physical Review B. 2010;82(9). doi:10.1103/physrevb.82.094110
LibreCat: /record/13828
DOI: 10.1103/physrevb.82.094110

Krivosheeva AV, Sanna S, Schmidt WG. First-principles investigation of CO adsorption on Pt/Ge(001)-(4×2). Computational Materials Science. 2010;49(4):895-898. doi:10.1016/j.commatsci.2010.06.043
LibreCat: /record/13829
DOI: 10.1016/j.commatsci.2010.06.043

Rauls E, Wiebe J, Schmidt WG. Understanding the cubic AlN growth plane from first principles. Journal of Crystal Growth. 2010;312:2892-2895. doi:10.1016/j.jcrysgro.2010.07.027
LibreCat: /record/13830
DOI: 10.1016/j.jcrysgro.2010.07.027