Planar Hall sensors for micro-Hall magnetometry
M. Rahm, J. Raabe, R. Pulwey, J. Biberger, W. Wegscheider, D. Weiss, C. Meier, Journal of Applied Physics 91 (2002) 7980.
LibreCat: /record/7685
DOI: 10.1063/1.1453338

Control of the confining potential in ballistic constrictions using a persistent charging effect
S.F. Fischer, G. Apetrii, S. Skaberna, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2002) 2779–2781.
LibreCat: /record/8731
DOI: 10.1063/1.1511278

Flux-quantum-modulated Kondo conductance in a multielectron quantum dot
C. Fühner, U.F. Keyser, R.J. Haug, D. Reuter, A.D. Wieck, Physical Review B (2002).
LibreCat: /record/8732
DOI: 10.1103/physrevb.66.161305

Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures
D. Kähler, U. Kunze, D. Reuter, A.D. Wieck, Microelectronic Engineering (2002) 619–623.
LibreCat: /record/8733
DOI: 10.1016/s0167-9317(02)00474-4

Aharonov–Bohm cages in the GaAlAs/GaAs system
C. Naud, G. Faini, D. Mailly, J. Vidal, B. Douçot, G. Montambaux, A. Wieck, D. Reuter, Physica E: Low-Dimensional Systems and Nanostructures (2002) 190–196.
LibreCat: /record/8734
DOI: 10.1016/s1386-9477(01)00307-1

Anomalous In-Plane Motion of Excitons in Single GaAs Quantum Wells
F. Pulizzi, P.C.M. Christianen, J.C. Maan, S. Eshlaghi, D. Reuter, A.D. Wieck, Physica Status Solidi (A) (2002) 641–645.
LibreCat: /record/8735
DOI: 10.1002/1521-396x(200204)190:3<641::aid-pssa641>3.0.co;2-r

Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip
J. Regul, U.F. Keyser, M. Paesler, F. Hohls, U. Zeitler, R.J. Haug, A. Malavé, E. Oesterschulze, D. Reuter, A.D. Wieck, Applied Physics Letters (2002) 2023–2025.
LibreCat: /record/8736
DOI: 10.1063/1.1506417

Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping
D. Reuter, C. Meier, A. Seekamp, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures 13 (2002) 938–941.
LibreCat: /record/8737
DOI: 10.1016/s1386-9477(02)00239-4

Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)
D. Reuter, P. Schafmeister, J. Koch, K. Schmidt, A.. Wieck, Materials Science and Engineering: B (2002) 230–233.
LibreCat: /record/8738
DOI: 10.1016/s0921-5107(01)00871-6

A multipurpose torsional magnetometer with optical detection
M.R. Schaapman, P.C.M. Christianen, J.C. Maan, D. Reuter, A.D. Wieck, Applied Physics Letters (2002) 1041–1043.
LibreCat: /record/8740
DOI: 10.1063/1.1498152

Electronic structure of InAs self-assembled quantum dots
K.H. Schmidt, C. Bock, U. Kunze, V.V. Khorenko, S. Malzer, G.H. Döhler, M. Versen, D. Reuter, A.D. Wieck, Materials Science and Engineering: B (2002) 238–242.
LibreCat: /record/8741
DOI: 10.1016/s0921-5107(01)00873-x

Phonon excitation of a two-dimensional electron system around ;d=1
F. Schulze-Wischeler, U. Zeitler, F. Hohls, R.J. Haug, D. Reuter, A.D. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2002) 474–477.
LibreCat: /record/8742
DOI: 10.1016/s1386-9477(01)00342-3

Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam
M. Vitzethum, R. Schmidt, P. Kiesel, P. Schafmeister, D. Reuter, A.D. Wieck, G.H. Döhler, Physica E: Low-Dimensional Systems and Nanostructures (2002) 143–146.
LibreCat: /record/8743
DOI: 10.1016/s1386-9477(01)00506-9

A novel photoconductive detector for single photon detection
M. Vitzethum, R. Schmidt, P. Kiesel, P. Schafmeister, J. Koch, D. Reuter, A.D. Wieck, G.H. Döhler, Physica E: Low-Dimensional Systems and Nanostructures (2002) 570–573.
LibreCat: /record/8744
DOI: 10.1016/s1386-9477(01)00475-1

Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential
M. Versen, K.H. Schmidt, C. Bock, D. Reuter, A.D. Wieck, U. Kunze, Physica Status Solidi (B) (2002) 669–673.
LibreCat: /record/8745
DOI: 10.1002/(sici)1521-3951(200104)224:3<669::aid-pssb669>3.3.co;2-h

Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices
D. Reuter, C. Meier, M.A.S. Álvarez, A.D. Wieck, Applied Physics Letters (2002) 377–379.
LibreCat: /record/8746
DOI: 10.1063/1.1386618

Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.
LibreCat: /record/8747
DOI: 10.1088/0268-1242/16/7/314

Increased mobility anisotropy in selectively doped AlxGxAs/GaAs heterostructures with high electron densities
D. Reuter, M. Versen, M.D. Schneider, A.D. Wieck, Journal of Applied Physics (2002) 321–325.
LibreCat: /record/8763
DOI: 10.1063/1.373660

Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.
LibreCat: /record/8768
DOI: 10.1088/0268-1242/16/7/314

Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length
M.E. Gershenson, Y.B. Khavin, D. Reuter, P. Schafmeister, A.D. Wieck, Physical Review Letters (2002) 1718–1721.
LibreCat: /record/8771
DOI: 10.1103/physrevlett.85.1718