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Fühner, C., et al. “Flux-Quantum-Modulated Kondo Conductance in a Multielectron Quantum Dot.”10.1103/physrevb.66.161305__Physical Review B, 2002, doi:10.1103/physrevb.66.161305.
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Kähler, D., et al. “Quantum Wire Fabrication from Compensating-Layer GaAs–AlGaAs Heterostructures.”10.1016/s0167-9317(02)00474-4__Microelectronic Engineering, 2002, pp. 619–23, doi:10.1016/s0167-9317(02)00474-4.
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DOI: 10.1016/s0167-9317(02)00474-4

Naud, C., et al. “Aharonov–Bohm Cages in the GaAlAs/GaAs System.”10.1016/s1386-9477(01)00307-1__Physica E: Low-Dimensional Systems and Nanostructures, 2002, pp. 190–96, doi:10.1016/s1386-9477(01)00307-1.
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DOI: 10.1016/s1386-9477(01)00307-1

Pulizzi, F., et al. “Anomalous In-Plane Motion of Excitons in Single GaAs Quantum Wells.”10.1002/1521-396x(200204)190:3&#60;641::aid-pssa641&#62;3.0.co;2-r__Physica Status Solidi (A), 2002, pp. 641–45, doi:10.1002/1521-396x(200204)190:3&#60;641::aid-pssa641&#62;3.0.co;2-r.
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Regul, J., et al. “Fabrication of Quantum Point Contacts by Engraving GaAs/AlGaAs Heterostructures with a Diamond Tip.”10.1063/1.1506417__Applied Physics Letters, 2002, pp. 2023–25, doi:10.1063/1.1506417.
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DOI: 10.1063/1.1506417

Reuter, Dirk, et al. “Fabrication of Two-Dimensional in-Plane Gate Transistors by Focused Ion Beam Doping.”10.1016/s1386-9477(02)00239-4__Physica E: Low-Dimensional Systems and Nanostructures, vol. 13, 2002, pp. 938–41, doi:10.1016/s1386-9477(02)00239-4.
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DOI: 10.1016/s1386-9477(02)00239-4

Reuter, Dirk, et al. “Growth of InAs Quantum Dots on Focussed Ion Beam Implanted GaAs(100).”10.1016/s0921-5107(01)00871-6__Materials Science and Engineering: B, 2002, pp. 230–33, doi:10.1016/s0921-5107(01)00871-6.
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Schaapman, M. R., et al. “A Multipurpose Torsional Magnetometer with Optical Detection.”10.1063/1.1498152__Applied Physics Letters, 2002, pp. 1041–43, doi:10.1063/1.1498152.
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DOI: 10.1063/1.1498152

Schmidt, K. H., et al. “Electronic Structure of InAs Self-Assembled Quantum Dots.”10.1016/s0921-5107(01)00873-x__Materials Science and Engineering: B, 2002, pp. 238–42, doi:10.1016/s0921-5107(01)00873-x.
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DOI: 10.1016/s0921-5107(01)00873-x

Schulze-Wischeler, F., et al. “Phonon Excitation of a Two-Dimensional Electron System around 9d=1.”10.1016/s1386-9477(01)00342-3__Physica E: Low-Dimensional Systems and Nanostructures, 2002, pp. 474–77, doi:10.1016/s1386-9477(01)00342-3.
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DOI: 10.1016/s1386-9477(01)00342-3

Vitzethum, M., et al. “Quantum Dot Micro-LEDs for the Study of Few-Dot Electroluminescence, Fabricated by Focussed Ion Beam.”10.1016/s1386-9477(01)00506-9__Physica E: Low-Dimensional Systems and Nanostructures, 2002, pp. 143–46, doi:10.1016/s1386-9477(01)00506-9.
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DOI: 10.1016/s1386-9477(01)00506-9

Vitzethum, M., et al. “A Novel Photoconductive Detector for Single Photon Detection.”10.1016/s1386-9477(01)00475-1__Physica E: Low-Dimensional Systems and Nanostructures, 2002, pp. 570–73, doi:10.1016/s1386-9477(01)00475-1.
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DOI: 10.1016/s1386-9477(01)00475-1

Versen, M., et al. “Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential.”10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h__Physica Status Solidi (B), 2002, pp. 669–73, doi:10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h.
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Reuter, Dirk, et al. “Increased Thermal Budget for Selectively Doped Heterostructures by Employing AlAs/GaAs Superlattices.”10.1063/1.1386618__Applied Physics Letters, 2002, pp. 377–79, doi:10.1063/1.1386618.
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DOI: 10.1063/1.1386618

Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxG-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”10.1088/0268-1242/16/7/314__Semiconductor Science and Technology, 2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314.
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DOI: 10.1088/0268-1242/16/7/314

Reuter, Dirk, et al. “Increased Mobility Anisotropy in Selectively Doped AlxGxAs/GaAs Heterostructures with High Electron Densities.”10.1063/1.373660__Journal of Applied Physics, 2002, pp. 321–25, doi:10.1063/1.373660.
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DOI: 10.1063/1.373660

Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxG-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”10.1088/0268-1242/16/7/314__Semiconductor Science and Technology, 2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314.
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DOI: 10.1088/0268-1242/16/7/314

Gershenson, M. E., et al. “Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length.”10.1103/physrevlett.85.1718__Physical Review Letters, 2002, pp. 1718–21, doi:10.1103/physrevlett.85.1718.
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DOI: 10.1103/physrevlett.85.1718

Versen, M., et al. “Nanoscale Devices Fabricated by Direct Machining of GaAs with an Atomic Force Microscope.”10.1016/s0304-3991(99)00127-8__Ultramicroscopy, 2002, pp. 159–63, doi:10.1016/s0304-3991(99)00127-8.
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DOI: 10.1016/s0304-3991(99)00127-8