N. Esser et al., “Atomic Structure of the Sb-Stabilized GaAs(100)-(2×4) Surface,” Physical Review Letters, vol. 77, no. 21, pp. 4402–4405, 1996.
LibreCat: /record/13782
DOI: 10.1103/physrevlett.77.4402

W. G. Schmidt and F. Bechstedt, “Geometry and electronic structure of GaAs(001)(2×4) reconstructions,” Physical Review B, vol. 54, no. 23, pp. 16742–16748, 1996.
LibreCat: /record/13783
DOI: 10.1103/physrevb.54.16742

P. V. Santos, B. Koopmans, N. Esser, W. G. Schmidt, and F. Bechstedt, “Optical Properties of Ordered As Layers on InP(110) Surfaces,” Physical Review Letters, vol. 77, no. 4, pp. 759–762, 1996.
LibreCat: /record/13784
DOI: 10.1103/physrevlett.77.759

W. G. Schmidt and F. Bechstedt, “Atomic structures of GaAs(100)-(2 × 4) reconstructions,” Surface Science, vol. 360, no. 1, pp. L473–L477, 1996.
LibreCat: /record/13785
DOI: 10.1016/0039-6028(96)00728-5

F. Bechstedt, W. G. Schmidt, and A. Scholze, “Adatoms and vacancies on the diamond(111) surface,” Europhysics Letters (EPL), vol. 35, no. 8, pp. 585–590, 1996.
LibreCat: /record/13786
DOI: 10.1209/epl/i1996-00155-0

W. Schmidt, “Adsorption of group-V elements on III–V (1 1 0) surfaces,” Surface Science Reports, vol. 25, pp. 141–223, 1996.
LibreCat: /record/13787
DOI: 10.1016/s0167-5729(96)00006-4

W. G. Schmidt and W. . Verwoerd, “Annihilation of delocalized positrons: a comparison of diamond and silicon,” Physics Letters A, vol. 222, no. 4, pp. 275–280, 1996.
LibreCat: /record/13788
DOI: 10.1016/0375-9601(96)00653-6

A. Scholze, W. G. Schmidt, and F. Bechstedt, “Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face,” Physical Review B, vol. 53, no. 20, pp. 13725–13733, 1996.
LibreCat: /record/13789
DOI: 10.1103/physrevb.53.13725

W. G. Schmidt, P. Käckell, and F. Bechstedt, “d core-level shifts at,” Surface Science, vol. 357–358, pp. 545–549, 1996.
LibreCat: /record/13790
DOI: 10.1016/0039-6028(96)00220-8

A. Scholze, W. G. Schmidt, and F. Bechstedt, “Diamond (111) and (100) surface reconstructions,” Thin Solid Films, vol. 281–282, pp. 256–259, 1996.
LibreCat: /record/13791
DOI: 10.1016/0040-6090(96)08646-4

W. G. Schmidt, F. Bechstedt, and G. P. Srivastava, “Phonons at III–V (110) surfaces,” Surface Science, vol. 352–354, pp. 83–88, 1996.
LibreCat: /record/13792
DOI: 10.1016/0039-6028(95)01095-5

W. G. Schmidt, A. Scholze, and F. Bechstedt, “Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface?,” Surface Science, vol. 351, pp. 183–188, 1996.
LibreCat: /record/13793
DOI: 10.1016/0039-6028(95)01270-2

P. Käckell, W. G. Schmidt, and F. Bechstedt, “Se-induced 3d core-level shifts of GaAs(110),” Applied Surface Science, vol. 104–105, pp. 141–146, 1996.
LibreCat: /record/13794
DOI: 10.1016/s0169-4332(96)00135-3

A. Scholze, W. G. Schmidt, P. Käckell, and F. Bechstedt, “Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure,” Materials Science and Engineering: B, vol. 37, no. 1–3, pp. 158–161, 1996.
LibreCat: /record/13795
DOI: 10.1016/0921-5107(95)01477-2

T. Meier et al., “Coherent Dynamics of Semiconductor Heterostructures,” in Microscopic Theory Of Semiconductors: Quantum Kinetics, Confinement and Lasers, S. W. Koch, Ed. Singapore: World Scientific, 1996, pp. 81–130.
LibreCat: /record/43407
DOI: 10.1142/9789812830487_0003

T. Meier et al., “Dephasing of interacting heavy-hole and light-hole excitons in GaAs quantum wells,”10.1364/JOSAB.13.001026__Journal of the Optical Society of America B, vol. 13, no. 5, pp. 1026–1030, 1996, doi:10.1364/JOSAB.13.001026 .
LibreCat: /record/43413
DOI: 10.1364/JOSAB.13.001026

T. Meier, F. Rossi, K.-C. Je, J. Hader, P. Thomas, and S. W. Koch, “On the Observability of dynamic localization in semiconductor superlattices using optical spectroscopy,” in Hot Carriers in Semiconductors, K. Hess, Ed. Plenum Press: New York, 1996, pp. 195–197.
LibreCat: /record/43553
DOI: 10.1007/978-1-4613-0401-2_46

T. Meier et al., “Microscopic theory of the Bloch-oscillation dynamics in semiconductor superlattices: Intra- versus interband Dephasing,” in Proceedings of the 23rd ICPS, Berlin, 1996, pp. 1775–1778.
LibreCat: /record/43617

T. Meier et al., “Exciton ionization induced by an electric field in a strongly coupled GaAs/AlxG-xAs superlattice,”10.1103/PhysRevB.53.13688__Physical Review-Section B-Condensed Matter, vol. 53, no. 20, pp. 13688–13693, 1996, doi:10.1103/PhysRevB.53.13688 .
LibreCat: /record/43410
DOI: 10.1103/PhysRevB.53.13688

T. Meier et al., “Disorder mediated biexcitonic beats in semiconductor quantum wells,”10.1103/PhysRevB.54.4436__Physical Review B, vol. 54, no. 7, pp. 4436–4439, 1996, doi:10.1103/PhysRevB.54.4436 .
LibreCat: /record/43416
DOI: 10.1103/PhysRevB.54.4436