T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization of unintentional doping in nonpolar GaN,” Journal of Applied Physics, vol. 107, no. 2, 2010.

F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E. Rauls, “Defects in carbon implanted silicon calculated by classical potentials and first-principles methods,” Physical Review B, vol. 82, no. 9, 2010.

J. Lindner, “Advanced topics and applications of Transmission Electron Microscopy, Part I-II,” presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain), 2010.

D. Ila, N. Kishimoto, J. Lindner, and J. Baglin, Eds., Ion Beams and Nano-Engineering, vol. 1181. MRS Symposium Proceedings , 2010.

M. Häberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers,” Journal of Physics: Conference Series, vol. 209, 2010.

M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,” physica status solidi (b), vol. 247, no. 7, pp. 1753–1756, 2010.

M. Häberlen et al., “Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth,” Journal of Applied Physics, vol. 108, no. 3, 2010.

R. Hao et al., “The effects of annealing on non-polar (112¯0) a-plane GaN films,” Journal of Crystal Growth, vol. 312, no. 23, pp. 3536–3543, 2010.

A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC,” Materials Science Forum, vol. 645–648, pp. 403–406, 2010.

H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, and K.-P. Hüsch, “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*,” Chemie Ingenieur Technik, vol. 82, no. 3, pp. 251–258, 2010.

S. Schumacher, I. Galbraith, A. Ruseckas, G. A. Turnbull, and I. D. W. Samuel, “Dynamics of photoexcitation and stimulated optical emission in conjugated polymers: A multiscale quantum-chemistry and Maxwell-Bloch-equations approach,” Physical Review B, 2010.

C. Thierfelder, S. Sanna, A. Schindlmayr, and W. G. Schmidt, “Do we know the band gap of lithium niobate?,” Physica Status Solidi C, vol. 7, no. 2, pp. 362–365, 2010.

U. Gerstmann, M. Rohrmüller, F. Mauri, and W. G. Schmidt, “Ab initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces,” physica status solidi (c), vol. 7, no. 2, pp. 157–160, 2010.

S. Wippermann et al., “Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles,” physica status solidi (c), vol. 7, no. 2, pp. 133–136, 2010.

C. Bihler et al., “Manganese-hydrogen complexes inGxMnxN,” Physical Review B, vol. 80, no. 20, 2010.

S. Blankenburg, E. Rauls, and W. G. Schmidt, “Catalytic Action of a Cu(111) Surface on Tetraazaperopyrene Polymerization,” The Journal of Physical Chemistry Letters, vol. 1, pp. 3266–3270, 2010.

S. Wippermann and W. G. Schmidt, “Entropy Explains Metal-Insulator Transition of the Si(111)-In Nanowire Array,” Physical Review Letters, vol. 105, no. 12, 2010.

F. Zirkelbach, B. Stritzker, K. Nordlund, J. K. N. Lindner, W. G. Schmidt, and E. Rauls, “Defects in carbon implanted silicon calculated by classical potentials and first-principles methods,” Physical Review B, vol. 82, no. 9, 2010.

A. V. Krivosheeva, S. Sanna, and W. G. Schmidt, “First-principles investigation of CO adsorption on Pt/Ge(001)-(4×2),” Computational Materials Science, vol. 49, no. 4, pp. 895–898, 2010.

E. Rauls, J. Wiebe, and W. G. Schmidt, “Understanding the cubic AlN growth plane from first principles,” Journal of Crystal Growth, vol. 312, pp. 2892–2895, 2010.